Now showing items 21-30 of 44
Radiobrightness of Diurnally Heated, Freezing Soil
(University of Michigan. Radiation Laboratory, 1989-08)
Resonant-tunneling devices for millimeter-wave generation
(Kluwer Academic Publishers-Plenum Publishers; Plenum Publishing Corporation ; Springer Science+Business Media, 1989-06)
Oscillations from resonant-tunneling diodes have been observed up to 200 GHz, and theoretical estimates predict that device performance should extend into the THz range. This paper addresses the issue of the ultimate ...
Growth phenomena and characteristics of strained InxGa1-xAs on GaAs
(Elsevier, 1989-02-02)
We have investigated the molecular beam epitaxial growth, structural and optical properties of InGaAs on GaAs. We have focused first on the initial stages of growth where the growth is expected to be under coherent strain ...
Theoretical Development and Numerical Implementation of a Domain-Boundary Integral Equation for Two-Dimensional Electromagnetic Scattering.
(University of Michigan. Radiation Laboratory, 1989-04)
Novel use of resonant tunneling structures for optical and IR modulators
(Elsevier, 1989)
The basic concepts and some preliminary calculations are presented showing the feasibility of high speed optical and infrared modulators based on resonant tunneling structures. A modulator based on a conventional resonant ...
Design, fabrication and operation of a hot electron resonant tunneling transistor
(Elsevier, 1989-12)
Transistors employing resonant tunneling injection of hot electrons into a thin quantum well base region have been fabricated. The base region in these transistors is formed by a narrow bandgap material like InGaAs so that ...
Finite Element-Boundary Element Methods for Electromagnetic Scattering.
(University of Michigan. Radiation Laboratory, 1989-10)
A proposed narrow-band-gap base transistor structure
(Elsevier, 1989)
A transistor structure is proposed which alleviates the problem of high base resistance in the narrow quantum-well base region of the Resonant-Tunneling Transistor (RTT). This idea may also be used to improve the performance ...
Diffusion effects in short-channel GaAs MESFETs
(Elsevier, 1989-03)
Diffusion effects in short-channel GaAs MESFETs are studied using a two-dimensional electron temperature simulation. A structure that consists of two n+-n contacts on a thin channel region was used as a test vehicle for ...