Now showing items 61-70 of 101
Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systems
(Elsevier, 1987)
We present systematic studies of the temperature dependence of linewidths and lifetimes of excitonic transitions in quantum wells grown by molecular beam epitaxy using both photoluminescence(PL) and optical absorption. The ...
Characterization of focal field formed by a large numerical aperture paraboloidal mirror and generation of ultra-high intensity (10 22 W/cm 2 )
(Springer-Verlag, 2005-06)
We describe a method to measure the aberrations of a high numerical aperture off-axis paraboloid and correct for the aberrations using adaptive optics. It is then shown that the characterized aberrations can be used to ...
Pion production under the action of intense ultrashort laser pulse on a solid target
(Nauka/Interperiodica; MAIK "Nauka/Interperiodica" ; Springer Science+Business Media, 2001-12)
Two-dimensional “particle-in-cell” modeling was carried out to determine the laser intensity threshold for pion production by protons accelerated by the relativistically strong short laser pulses acting on a solid target. ...
A proposed narrow-band-gap base transistor structure
(Elsevier, 1989)
A transistor structure is proposed which alleviates the problem of high base resistance in the narrow quantum-well base region of the Resonant-Tunneling Transistor (RTT). This idea may also be used to improve the performance ...
Monte Carlo analysis of repeated overshoot structures
(Elsevier, 1985)
The effectiveness of two recently proposed repeated overshoot structures is investigated using Monte Carlo simulation. Results are presented showing electron velocity, energy and valley occupancy as a function of bias ...
Structural fluctuations and randomness in GaAs---AlxGa1-xAs superlattices
(Elsevier, 1988)
We discuss the use of X-ray and Raman scattering to probe structural disorder in aperiodic GaAs---AlxGa1-xAs superlattices, including random and quasiperiodic examples. Evidence is found for the presence of monolayer-thick ...
Electronic properties of pseudomorphic InGaAs/AlGaAs (on GaAs) and InGaAs/InAlAs (on InP) Modfet structures
(Elsevier, 1988)
Pseudomorphic (strained channel) modulation doped field effect transistors (MODFETs) have recently received a considerable amount of attention. These devices provide potential for both improved device performance and new ...
Photocurrent and intrinsic modulation speeds in P-I(MQW)-N GaAs/AlGaAs stark effect modulators
(Elsevier, 1990)
Theoretical and experimental studies on photocurrent are presented in p-i-n GaAs/Al0.3Ga0.7As MQW modulators and detectors. Field dependent excitonic spectra is calculated to obtain carrier generation and recombination ...
Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE
(Elsevier, 1993-02-02)
The InAlAs/InGaAs high electron mobility transistor offers excellent high frequency, low noise operation for amplifiers. While this material system has been grown primarily by conventional MBE, other growth techniques have ...