Now showing items 1-10 of 169
Measurement of fracture stress, young's modulus, and intrinsic stress of heavily boron-doped silicon microstructures
(Elsevier, 1989-12-10)
Heavily boron-doped silicon microstructures fabricated using deep-boron diffusions and boron etch-stops have been widely used in a variety of integrated sensors and actuators. For many applications, having knowledge of the ...
COMMENT: Reply to a comment by R Newton
(IOP Publishing Ltd, 1989-06-01)
Following Newton's comment (see ibid., vol.5, p.437 (1989)), the author points out that: (1) the major contribution of his previous paper (see ibid., vol.4, p.549 (1988)) is the generalised fast Cholesky algorithm, not the ...
Orientation-dependent phase equilibria in in_1-x Ga_x As: A model including surface energies
(Elsevier, 1985)
Orientation-dependent growth phenomena have been observed for liquid-phase epitaxial In1-xGaxAs and other ternary and quaternary III-V semiconductors. The data cannot be explained by existing regular solution phase equilibria ...
Why ring regenerative amplification (regen)?
(Springer-Verlag, 2002-06)
We show that ring cavity regenerative amplifiers (regens) have distinct advantages over the linear ones for applications in chirped pulse amplification. Larger energy, better contrast and better isolation from the oscillator ...
A millimeter wave technique for measuring ice thickness on the Space Shuttle's external tank
(Kluwer Academic Publishers-Plenum Publishers; Plenum Publishing Corporation ; Springer Science+Business Media, 1991-12)
The external fueltank of the Space Shuttle contains extremely lowtemperature propellents. A layer of material known as SOFI (Spray-On Foam Insulation) covering the outside of the fueltank provides thermal insulation between ...
Photoluminescence Studies on Self-Organized InAlAs/AlGaAs Quantum Dots under Pressure
(WILEY-VCH Verlag, 1999-01)
The pressure dependence of the low temperature photoluminescence (PL) in self-organized In 0.5 Al 0.5 As/Al 0.25 Ga 0.75 As quantum dots (QD) has been investigated up to 8 GPa. Interesting features of the QD PL observed ...
Theory of lateral bandgap variation achievable by strain engineering in patterned substrate strain epitaxy
(Elsevier, 1990)
Energy minimization considerations are used to estimate the strain tensor for pseudomorphic structures grown on a patterned substrate. We show that if a material B is deposited below critical thickness in a hole of width ...
High-performance mid-infrared quantum dot infrared photodetectors
(IOP Publishing Ltd, 2005-07-07)
Quantum dot infrared photodetectors (QDIPs) have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on intersublevel transitions in quantum dots (QDs). Three-dimensional ...
The peak in the thermal conductivity of Cu-O superconductors: Electronic or phononic origin?
(Kluwer Academic Publishers-Plenum Publishers; Plenum Publishing Corporation ; Springer Science+Business Media, 1994-04)
The thermal conductivity К of hole-doped Cu-O plane high- T c perovskites exhibits a dramatic increase below T c which results in a pronounced peak near T c /2. The origin of this peak was initially thought to arise from ...
Role of numerical simulations in the semiconductor heterostructure technology using molecular beam epitaxy
(Elsevier, 1986)
The present and potential role of computer simulations in understanding the growth and fabrication of heterostructure interfaces grown by molecular beam epitaxy (MBE) is discussed. The important atomistic processes involved ...