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Microstructure of Thin Single Crystals of Copper
(The American Institute of Physics, 1963-04)
Single‐crystal films of copper of 700–800 Å thickness have been prepared showing high densities of wide stacking faults. Variations in the annealing treatment of the films affect the nature of the imperfections occurring ...
Formation of Stacking Faults in Single‐Crystal Films of Copper Grown on NaCl, KCl, and LiF Substrates
(The American Institute of Physics, 1966-06)
Copper films 700 Å thick deposited on NaCl or KCl at 330°C are preferentially oriented on the (001) plane, and after heating at 630°C they exhibit complex stacking faults of 2 to 3 μ in width. Examination of carbon replicas ...
Electron Diffraction Study of the Structure of Trimethylphosphine
(The American Institute of Physics, 1960-02)
The structural parameters of gaseous trimethylphosphine, including standard errors, were found to be as follows: center of gravity bond distances were rCP=1.8465±0.003 A, and rCH=1.091±0.006 A; angles were <C☒P☒C=98.6±0.3°, ...