Now showing items 1-9 of 9
Vibrational analysis of 2,2,3-trichlorobutane and a force field for 2,2-dichloropropane
(Elsevier, 1990)
The infrared and Raman spectra of 2,2,3-dichlorobutane have been analysed in terms of normal modes calculated from a force field for secondary dichlorides refined using this molecule as well as 2,2-dichlorobutane and ...
Vibrational analysis of 2,3,4-trichloropentanes
(Elsevier, 1990)
One meso form and the racemic isomer of 2,3,4-trichloropentane have been synthesized, and their infrared and Raman spectra analysed on the basis of a general force field refined for multiply-chlorinated hydrocarbons. ...
Comprehensive force field for multiply-chlorinated hydrocarbons
(Elsevier, 1990)
A force field is presented that has been optimized for chlorinated hyrocarbons containing isolated, vicinal, and geminal secondary chlorines. For carbon--chlorine stretch modes, 74 frequencies in 10 molecules are reproduced ...
High resolution laser spectroscopy of relaxation and the excitation lineshape of excitons in GaAs quantum well structures
(Elsevier, 1990-04-01)
A new class of measurements on GaAs quantum well structures based on frequency domain nonlinear laser spectroscopy is described. Room temperature measurements of the excitation relaxation show an interference effect in the ...
Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures
(Elsevier, 1990-04-01)
We report on transmission electron microscopy, secondary ion mass spectroscopy, X-ray and Raman scattering studies of GaAs/Al/GaAs heterostructures grown by migration enhanced epitaxy.
An STM study of molecular-beam epitaxy growth of GaAs
(Elsevier, 1993-01-10)
Scanning tunneling microscopy has been used to investigate molecular-beam epitaxy growth of GaAs. By quenching the sample during deposition, we have imaged the GaAs(001) surface as it appeared during growth. Large scale ...
The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)
(Elsevier, 1993-12-20)
Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. Images show that in the earliest stages of deposition the morphology oscillates between one with ...
Charge-density domains in photoexcited quantum-well structures
(Elsevier, 1990-04-01)
We present theoretical and experimental results on the dielectric response of an electron-hole plasma confined to a quantum-well. Hartree calculations reveal large nonlinearities in the screening properties which, when ...