Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAsInxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures
dc.contributor.author | Kamath, Kishore K. | en_US |
dc.contributor.author | Chervela, N. | en_US |
dc.contributor.author | Linder, Kojo K. | en_US |
dc.contributor.author | Sosnowski, T. S. | en_US |
dc.contributor.author | Jiang, Hongtao | en_US |
dc.contributor.author | Norris, Theodore B. | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T20:28:49Z | |
dc.date.available | 2010-05-06T20:28:49Z | |
dc.date.issued | 1997-08-18 | en_US |
dc.identifier.citation | Kamath, K.; Chervela, N.; Linder, K. K.; Sosnowski, T.; Jiang, H-T.; Norris, T.; Singh, J.; Bhattacharya, P. (1997). "Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAsInxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures." Applied Physics Letters 71(7): 927-929. <http://hdl.handle.net/2027.42/69357> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69357 | |
dc.description.abstract | The characteristics of ground and excited state luminescent transitions in In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs and In0.35Ga0.65As/GaAsIn0.35Ga0.65As/GaAs self-organized single- and multiple-layer quantum dots forming the active regions of lasers have been studied as a function of incident excitation intensity, temperature and number of dot layers. The results have been correlated with molecular beam epitaxial growth conditions. The threshold excitation density for the saturation of the ground state increases with the number of dot layers and no saturation is observed in samples with more than six dot layers up to an excitation power density of 2 kW/cm2.2kW/cm2. The luminescent decay times for the ground and excited states are around 700 and 250 ps, respectively, almost independent of the number of dot layers. © 1997 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 495251 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAsInxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory and Ultrafast Sciences Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69357/2/APPLAB-71-7-927-1.pdf | |
dc.identifier.doi | 10.1063/1.119691 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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