Initiation and evolution of phase separation in heteroepitaxial InAlAs films
dc.contributor.author | Shin, B. | en_US |
dc.contributor.author | Lin, A. | en_US |
dc.contributor.author | Lappo, K. | en_US |
dc.contributor.author | Goldman, R. S. | en_US |
dc.contributor.author | Hanna, M. C. | en_US |
dc.contributor.author | Francoeur, S. | en_US |
dc.contributor.author | Norman, A. G. | en_US |
dc.contributor.author | Mascarenhas, A. | en_US |
dc.date.accessioned | 2010-05-06T20:29:00Z | |
dc.date.available | 2010-05-06T20:29:00Z | |
dc.date.issued | 2002-05-06 | en_US |
dc.identifier.citation | Shin, B.; Lin, A.; Lappo, K.; Goldman, R. S.; Hanna, M. C.; Francoeur, S.; Norman, A. G.; Mascarenhas, A. (2002). "Initiation and evolution of phase separation in heteroepitaxial InAlAs films." Applied Physics Letters 80(18): 3292-3294. <http://hdl.handle.net/2027.42/69359> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69359 | |
dc.description.abstract | We have investigated the initiation and evolution of phase separation in heteroepitaxial InAlAs films. In misfit-free InAlAs layers, cross-sectional scanning tunneling microscopy (XSTM) reveals the presence of isotropic nanometer-sized clusters. For lattice-mismatched InAlAs layers with 1.2% misfit, quasiperiodic contrast modulations perpendicular to the growth direction are apparent. Interestingly, these lateral modulations are apparently initiated within the first few bilayers of film growth, and both the amplitude and wavelength of the modulations increase with film thickness. The saturation value of the modulation wavelength determined from XSTM coincides with the lateral superlattice period determined from (002) x-ray reciprocal space maps, suggesting that the lateral modulation wavelength represents a periodic composition variation. Together, these results suggest that phase separation in the heteroepitaxial InAlAs thin-film system is a misfit-driven kinetic process initiated by random compositional nonuniformities, which later develop into coupled compositional and surface morphological variations. © 2002 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 434316 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Initiation and evolution of phase separation in heteroepitaxial InAlAs films | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | National Renewable Energy Laboratory, Golden, Colorado 80401 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69359/2/APPLAB-80-18-3292-1.pdf | |
dc.identifier.doi | 10.1063/1.1476386 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | G. B. Stringfellow, J. Cryst. Growth JCRGAE65, 454 (1983). | en_US |
dc.identifier.citedreference | A. Zunger and S. Mahajan, Handbook on Semiconductors (North–Holland, Amsterdam, 1994), Vol. 3, p. 1399. | en_US |
dc.identifier.citedreference | H. K. Cho, J. Y. Lee, M. S. Kwon, B. Lee, J. H. Baek, and W. S. Han, Mater. Sci. Eng., B MSBTEK64, 174 (1999). | en_US |
dc.identifier.citedreference | S. W. Jun, T.-Y. Seong, J. H. Lee, and B. Lee, Appl. Phys. Lett. APPLAB68, 3443 (1996). | en_US |
dc.identifier.citedreference | F. Peiró, A. Cornet, J. C. Ferrer, J. R. Morante, G. Halkias, and A. Georgakilas, Mater. Res. Soc. Symp. Proc. MRSPDH419, 265 (1996). | en_US |
dc.identifier.citedreference | G. Grenet, M. Gendry, M. Oustric, Y. Robach, L. Porte, G. Hollinger, O. Marty, M. Pitaval, and C. Priester, Appl. Surf. Sci. ASUSEE123, 324 (1998). | en_US |
dc.identifier.citedreference | J. M. Millunchick, R. D. Twesten, D. M. Follstaedt, S. R. Lee, E. D. Jones, Y. Zhang, S. P. Ahrenkiel, and A. Mascarenhas, Appl. Phys. Lett. APPLAB70, 1402 (1997). | en_US |
dc.identifier.citedreference | B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya, Appl. Phys. Lett. APPLAB74, 2824 (1999). | en_US |
dc.identifier.citedreference | S. R. Lee, J. Mirecki Millunchick, R. D. Twesten, D. M. Follstaedt, J. L. Reno, S. P. Ahrenkiel, and A. G. Norman, J. Mater. Sci. JMTSAS10, 191 (1999). | en_US |
dc.identifier.citedreference | M. L. Seaford, W. Wu, K. G. Eyink, D. H. Tomich, J. R. Tucker, and L. F. Eastman, J. Vac. Sci. Technol. B JVTBD915, 1274 (1997). | en_US |
dc.identifier.citedreference | R. S. Goldman, R. M. Feenstra, C. Silfvenius, B. Stålnacke, and G. Landgren, J. Vac. Sci. Technol. B JVTBD915, 1027 (1997). | en_US |
dc.identifier.citedreference | R. J. Asaro and W. A. Tiller, Metall. Trans. MTGTBF3, 1789 (1972). | en_US |
dc.identifier.citedreference | D. J. Srolovitz, Acta Metall. AMETAR37, 621 (1989). | en_US |
dc.identifier.citedreference | B. J. Spencer, P. W. Voorhees, and J. Tersoff, Appl. Phys. Lett. APPLAB76, 3022 (2000). | en_US |
dc.identifier.citedreference | T. Shitara, D. D. Vvedensky, J. H. Neave, and B. A. Joyce, Mater. Res. Soc. Symp. Proc. MRSPDH312, 267 (1993). | en_US |
dc.identifier.citedreference | S. Francoeur, M. C. Hanna, A. G. Norman, and A. Mascarenhas, Appl. Phys. Lett. APPLAB80, 243 (2002). | en_US |
dc.owningcollname | Physics, Department of |
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