Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5P2S5
dc.contributor.author | Glembocki, O. J. | en_US |
dc.contributor.author | Tuchman, J. A. | en_US |
dc.contributor.author | Dagata, J. A. | en_US |
dc.contributor.author | Ko, Kenton | en_US |
dc.contributor.author | Pang, S. W. | en_US |
dc.contributor.author | Stutz, C. E. | en_US |
dc.date.accessioned | 2010-05-06T20:30:17Z | |
dc.date.available | 2010-05-06T20:30:17Z | |
dc.date.issued | 1998-07-06 | en_US |
dc.identifier.citation | Glembocki, O. J.; Tuchman, J. A.; Dagata, J. A.; Ko, K. K.; Pang, S. W.; Stutz, C. E. (1998). "Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5P2S5." Applied Physics Letters 73(1): 114-116. <http://hdl.handle.net/2027.42/69373> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69373 | |
dc.description.abstract | Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/ArCl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5.P2S5. The plasma etch shifts the Fermi level of p-GaAsp-GaAs from near the valence band to midgap, but has no effect on n-GaAs.n-GaAs. For ion energies below 250 eV, post-etch P2S5P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it. © 1998 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 68042 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5P2S5 | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | U.S. Naval Research Laboratory, Washington, DC 20375-5347 | en_US |
dc.contributor.affiliationother | National Institute of Standards and Technology, Gaithersburg, Maryland 20899 | en_US |
dc.contributor.affiliationother | Wright–Patterson Laboratories, Dayton, Ohio 45433 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69373/2/APPLAB-73-1-114-1.pdf | |
dc.identifier.doi | 10.1063/1.121785 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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