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A critical examination of the molecular‐beam‐epitaxial growth of InxGa1−xAs/GaAs strained quantum well structures
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorOh, J. E.en_US
dc.contributor.authorDebbar, N.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T20:33:45Z
dc.date.available2010-05-06T20:33:45Z
dc.date.issued1989-02-01en_US
dc.identifier.citationPamulapati, J.; Oh, J. E.; Debbar, N.; Bhattacharya, P. (1989). "A critical examination of the molecular‐beam‐epitaxial growth of InxGa1−xAs/GaAs strained quantum well structures." Journal of Applied Physics 65(3): 1361-1363. <http://hdl.handle.net/2027.42/69411>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69411
dc.description.abstractWe have investigated the molecular‐beam‐epitaxial growth and optical properties of InxGa1−xAs/GaAs (0.07≤x≤0.20) single and multiple quantum well structures. Photoluminescence and absorption measurements were made to characterize the various structures. Low‐temperature excitonic linewidths as small as 1.2–2.4 meV have been obtained in 80–120‐Å InxGa1−xAs/GaAs (0.07≤x≤0.20) single and multiple quantum wells up to total thicknesses of 2.0 μm. The Stokes shift in these samples is ∼1–2 meV. This result is independent of the absence or presence of an intermediate composition buffer layer and indicates that the latter does not influence the optical properties of strained multiquantum wells. The growth kinetics and growth modes are more important factors in this respect.en_US
dc.format.extent3102 bytes
dc.format.extent506763 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleA critical examination of the molecular‐beam‐epitaxial growth of InxGa1−xAs/GaAs strained quantum well structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69411/2/JAPIAU-65-3-1361-1.pdf
dc.identifier.doi10.1063/1.343006en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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