C‐V and I‐V characteristics of quantum well varactors
dc.contributor.author | Sun, J. P. | en_US |
dc.contributor.author | Mains, R. K. | en_US |
dc.contributor.author | Chen, W. L. | en_US |
dc.contributor.author | East, Jack Roy | en_US |
dc.contributor.author | Haddad, George I. | en_US |
dc.date.accessioned | 2010-05-06T20:34:06Z | |
dc.date.available | 2010-05-06T20:34:06Z | |
dc.date.issued | 1992-09-15 | en_US |
dc.identifier.citation | Sun, J. P.; Mains, R. K.; Chen, W. L.; East, J. R.; Haddad, G. I. (1992). "C‐V and I‐V characteristics of quantum well varactors." Journal of Applied Physics 72(6): 2340-2346. <http://hdl.handle.net/2027.42/69415> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69415 | |
dc.description.abstract | A theoretical model for quantum well varactors is presented. The model is used to calculate the device C‐V and I‐V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Details of the design calculations and experimental results are presented. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 810574 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | C‐V and I‐V characteristics of quantum well varactors | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High‐Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69415/2/JAPIAU-72-6-2340-1.pdf | |
dc.identifier.doi | 10.1063/1.352322 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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