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Valley selective tunneling transistor based on valley discontinuities in AlGaAs heterostructures

dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T20:36:38Z
dc.date.available2010-05-06T20:36:38Z
dc.date.issued1989-12-18en_US
dc.identifier.citationSingh, Jasprit (1989). "Valley selective tunneling transistor based on valley discontinuities in AlGaAs heterostructures." Applied Physics Letters 55(25): 2652-2654. <http://hdl.handle.net/2027.42/69443>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69443
dc.description.abstractThe conduction‐band discontinuities in AlxGa1−xAs/AlyGa1−yAs heterostructure for various valleys (Γ, L, X) are utilized to conceive of a valley selective tunneling transistor. At low temperature, the perpendicular tunneling current is very small because of the large Γ‐Γ discontinuity and the small prefactor for Γ to X tunneling. However, if the valley population is altered by applying a lateral bias to the emitter, one can dramatically alter the perpendicular current since the X‐X discontinuity is nonexistent and the L‐L discontinuity is very small. By choosing proper values of x and y in the heterostructure, a very large current (power) change can be produced in the on and off states.en_US
dc.format.extent3102 bytes
dc.format.extent249686 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleValley selective tunneling transistor based on valley discontinuities in AlGaAs heterostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69443/2/APPLAB-55-25-2652-1.pdf
dc.identifier.doi10.1063/1.101963en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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