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Hot filament assisted deposition of silicon nitride thin films

dc.contributor.authorDeshpande, Sadanand V.en_US
dc.contributor.authorDupuie, Jeffrey L.en_US
dc.contributor.authorGulari, Erdoganen_US
dc.date.accessioned2010-05-06T20:41:25Z
dc.date.available2010-05-06T20:41:25Z
dc.date.issued1992-09-21en_US
dc.identifier.citationDeshpande, Sadanand V.; Dupuie, Jeffrey L.; Gulari, Erdogan (1992). "Hot filament assisted deposition of silicon nitride thin films." Applied Physics Letters 61(12): 1420-1422. <http://hdl.handle.net/2027.42/69495>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69495
dc.description.abstractHot filament assisted chemical vapor deposition (HFCVD) of silicon nitride thin films was studied with disilane (Si2H6) and ammonia (NH3) as the source gases. High optical density films were obtained at a low substrate temperature (375 °C) and high deposition rates (up to 1700 Å/min). The effects of disilane flow rate, filament temperature, and disilane carrier gas composition on film properties were investigated. Transmission infrared measurements showed low hydrogen content (<5%) in the films. Sputter depth profiling using x‐ray photoelectron spectroscopy indicated high film purity with only surface oxygen contamination from air exposure after deposition.en_US
dc.format.extent3102 bytes
dc.format.extent371777 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHot filament assisted deposition of silicon nitride thin filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48105en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69495/2/APPLAB-61-12-1420-1.pdf
dc.identifier.doi10.1063/1.107557en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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