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Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios

dc.contributor.authorMains, R. K.en_US
dc.contributor.authorHaddad, George I.en_US
dc.date.accessioned2010-05-06T20:41:30Z
dc.date.available2010-05-06T20:41:30Z
dc.date.issued1988-11-15en_US
dc.identifier.citationMains, R. K.; Haddad, G. I. (1988). "Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios." Journal of Applied Physics 64(10): 5041-5044. <http://hdl.handle.net/2027.42/69496>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69496
dc.description.abstractWigner function simulations of structures with experimentally observed high peak‐to‐valley ratios are carried out. It is shown that if care is taken with the numerical method used, the simulations reproduce these sharp resonances. When scattering is ignored, peak‐to‐valley ratios of 33.7 are obtained for a pseudomorphic InGaAs‐AlAs structure. The effects of phonon scattering are included to first order. Also, a small‐signal analysis is carried out and the results are used to predict the rf power generation capability of these devices.en_US
dc.format.extent3102 bytes
dc.format.extent641366 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleWigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratiosen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69496/2/JAPIAU-64-10-5041-1.pdf
dc.identifier.doi10.1063/1.342457en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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