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Noise in Single‐Crystal Tellurium from Thermal or Optical Excitation
dc.contributor.authorVis, Vincent Almon.en_US
dc.date.accessioned2010-05-06T20:42:46Z
dc.date.available2010-05-06T20:42:46Z
dc.date.issued1964-02en_US
dc.identifier.citationVis, Vincent A. (1964). "Noise in Single‐Crystal Tellurium from Thermal or Optical Excitation." Journal of Applied Physics 35(2): 365-368. <http://hdl.handle.net/2027.42/69510>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69510
dc.description.abstractThe electrical noise of carefully prepared single‐crystal tellurium samples was measured in the extrinsic temperature range. The effect of temperature variations on the noise power spectrum is interpreted quantitatively as the result of transitions between the valence band and four species of traps lying ∼0.045 eV above it. The additional noise due to steady optical excitation at 77°K is attributed to transverse carrier density gradients which result from nonuniform excitation.en_US
dc.format.extent3102 bytes
dc.format.extent351935 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleNoise in Single‐Crystal Tellurium from Thermal or Optical Excitationen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumInstitute of Science and Technology, University of Michigan, Ann Arbor, Michigan 48104en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69510/2/JAPIAU-35-2-365-1.pdf
dc.identifier.doi10.1063/1.1713319en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceFor a comprehensive discussion see J. S. Blakemore, G. D. Long, K. C. Nomura, and A. Nussbaum, Progress in Semiconductors (John Wiley & Sons, Inc., New York, 1962), Vol. 6.en_US
dc.identifier.citedreferenceT. J. Davies, J. Appl. Phys. 28, 1217 (1959).en_US
dc.identifier.citedreferenceF. M. Klaasen, K. M. van Vliet, and J. R. Fassett, J. Phys. Chem. Solids 22, 397 (1961); M. D. Pai, Master of Science thesis, University of Minnesota (1961).en_US
dc.identifier.citedreferenceD. F. Edwards, C. D. Butter, and L. D. McGlauchlin, Solid‐State Electron. 3, 24 (1961).en_US
dc.identifier.citedreferenceV. A. Vis, J. Appl. Phys. 35, 360 (1964) (the adjoining paper).en_US
dc.identifier.citedreferenceA. Van der Ziel, Fluctuation Phenomena in Semiconductors (Academic Press Inc., London, 1959).en_US
dc.identifier.citedreferenceSee, for instance, R. H. Bube, Photoconductivity of Solids (John Wiley & Sons, Inc., New York, 1960), p. 327.en_US
dc.identifier.citedreferenceJ. J. Brophy, J. Appl. Phys. 33, 117 (1962).en_US
dc.identifier.citedreferenceR. H. Bube, Ref. 7, p. 61.en_US
dc.identifier.citedreferenceK. M. van Vliet and J. Blok, Physica 22, 534 (1956).en_US
dc.identifier.citedreferenceA. Van der Ziel, Noise (Prentice‐Hall, Inc., Englewood Cliffs, New Jersey, 1956), p. 212.en_US
dc.owningcollnamePhysics, Department of


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