Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots
dc.contributor.author | Lita, B. | en_US |
dc.contributor.author | Goldman, R. S. | en_US |
dc.contributor.author | Phillips, J. D. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T20:42:52Z | |
dc.date.available | 2010-05-06T20:42:52Z | |
dc.date.issued | 1999-05-10 | en_US |
dc.identifier.citation | Lita, B.; Goldman, R. S.; Phillips, J. D.; Bhattacharya, P. K. (1999). "Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots." Applied Physics Letters 74(19): 2824-2826. <http://hdl.handle.net/2027.42/69511> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69511 | |
dc.description.abstract | We have investigated the vertical organization and evolution of 1-, 5-, 10-, and 20-layer stacks of molecular beam epitaxially grown self-assembled InAs/GaAs quantum dots using high resolution and large-scale cross-sectional scanning tunneling microscopy. We report results regarding the evolution of the dot sizes and shapes, and the assembly of vertically organized columns of stacked dots. As the number of dot layers within a stack is increased, the average spacing between vertically organized columns decreases, and the corresponding dots become more uniform in size. The data also suggest that the coalescence of neighboring stacks of dots has not occurred and therefore coalescence is not the mechanism leading to the observed uniform distribution of dot sizes and column spacings. © 1999 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 304328 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69511/2/APPLAB-74-19-2824-1.pdf | |
dc.identifier.doi | 10.1063/1.124026 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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