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Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer
dc.contributor.authorLinder, Kojo K.en_US
dc.contributor.authorZhang, F. C.en_US
dc.contributor.authorRieh, J. -S.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorHoughton, D.en_US
dc.date.accessioned2010-05-06T20:43:14Z
dc.date.available2010-05-06T20:43:14Z
dc.date.issued1997-06-16en_US
dc.identifier.citationLinder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.; Houghton, D. (1997). "Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer." Applied Physics Letters 70(24): 3224-3226. <http://hdl.handle.net/2027.42/69515>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69515
dc.description.abstractThe reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/SiSi0.85Ge0.15/Si epitaxial layers as low as ∼ 104 cm−2.∼104cm−2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition. © 1997 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleReduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layeren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherSiGe Microsystems, Inc., Nepean, Ontario, K2H 9C4, Canadaen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69515/2/APPLAB-70-24-3224-1.pdf
dc.identifier.doi10.1063/1.119132en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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