Defect generation by preferred nucleation in epitaxial Sr2RuO4/LaAlO3Sr2RuO4/LaAlO3
dc.contributor.author | Zurbuchen, Mark A. | en_US |
dc.contributor.author | Jia, Yunfa | en_US |
dc.contributor.author | Knapp, Stacy | en_US |
dc.contributor.author | Carim, Altaf H. | en_US |
dc.contributor.author | Schlom, Darrell G. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.date.accessioned | 2010-05-06T20:44:11Z | |
dc.date.available | 2010-05-06T20:44:11Z | |
dc.date.issued | 2003-11-10 | en_US |
dc.identifier.citation | Zurbuchen, Mark A.; Jia, Yunfa; Knapp, Stacy; Carim, Altaf H.; Schlom, Darrell G.; Pan, X. Q. (2003). "Defect generation by preferred nucleation in epitaxial Sr2RuO4/LaAlO3Sr2RuO4/LaAlO3." Applied Physics Letters 83(19): 3891-3893. <http://hdl.handle.net/2027.42/69525> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69525 | |
dc.description.abstract | The atomic structure of the film–substrate interface of a (001) Sr2RuO4/(100)c LaAlO3Sr2RuO4/(100)cLaAlO3 film, determined by high-resolution transmission electron microscopy and simulation, is reported. The structure of superconductivity-quenching Δc ≈ 0.25 nmΔc≈0.25nm out-of-phase boundaries (OPBs) in the film is also reported. Growth in one region on the La-terminated surface is observed to nucleate with a SrO layer. Because two structurally equivalent SrO layers exist within the unit cell, two neighboring nuclei with differing growth order (SrO-RuO2-SrO(SrO-RuO2-SrO or RuO2-SrO-SrO)RuO2-SrO-SrO) will nucleate an OPB where their misaligned growth fronts meet. Strategies to avoid OPB generation by this mechanism are suggested, which it is hoped may ultimately lead to superconducting Sr2RuO4Sr2RuO4 films. © 2003 American Institute of Physics. | en_US |
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dc.format.extent | 344244 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Defect generation by preferred nucleation in epitaxial Sr2RuO4/LaAlO3Sr2RuO4/LaAlO3 | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16803-6602 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69525/2/APPLAB-83-19-3891-1.pdf | |
dc.identifier.doi | 10.1063/1.1624631 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | Y. Maeno, H. Hashimoto, K. Yoshida, S. Nishizaki, T. Fujita, J. J. Bednorz, and F. Lichtenberg, Nature (London) NATUAS372, 532 (1994). | en_US |
dc.identifier.citedreference | T. M. Rice and M. Sigrist, J. Phys. C JCOMEL7, L643 (1995). | en_US |
dc.identifier.citedreference | Y. Maeno, T. M. Rice, and M. Sigrist, Phys. Today PHTOAD54, 42 (2001). | en_US |
dc.identifier.citedreference | D. G. Schlom, Y. Jia, L.-N. Zou, J. H. Haeni, S. Briczinski, M. A. Zurbuchen, C. W. Leitz, S. Madhavan, S. Wozniak, Y. Liu, M. E. Hawley, G. W. Brown, A. Dabkowski, H. A. Dabkowska, R. Uecker, and P. Reiche, Proc. SPIE PSISDG3481, 226 (1998). | en_US |
dc.identifier.citedreference | S. Ohashi, M. Lippmaa, N. Nakagawa, H. Nagasawa, H. Koinuma, and M. Kawasaki, Rev. Sci. Instrum. RSINAK70, 178 (1999). | en_US |
dc.identifier.citedreference | F. Lichtenberg, A. Catana, J. Mannhart, and D. G. Schlom, Appl. Phys. Lett. APPLAB60, 1138 (1992). | en_US |
dc.identifier.citedreference | A. P. Mackenzie, R. K. W. Haselwimmer, A. W. Tyler, G. G. Lonzarich, Y. Mori, S. Nishizaki, and Y. Maeno, Phys. Rev. Lett. PRLTAO80, 161 (1998). | en_US |
dc.identifier.citedreference | M. A. Zurbuchen, Y. Jia, S. K. Knapp, A. H. Carim, D. G. Schlom, L.-N. Zou, and Y. Liu, Appl. Phys. Lett. APPLAB78, 2351 (2001). | en_US |
dc.identifier.citedreference | T. Akima, S. Nishizaki, and Y. Maeno, J. Phys. Soc. Jpn. JUPSAU68, 694 (1999). | en_US |
dc.identifier.citedreference | Z. Q. Mao, Y. Mori, and Y. Maeno, Phys. Rev. B PRBMDO60, 610 (1999). | en_US |
dc.identifier.citedreference | J. G. Wen, C. Traeholt, and H. W. Zandbergen, Physica C PHYCE6205, 354 (1993). | en_US |
dc.identifier.citedreference | G. Kong, M. O. Jones, J. S. Abell, P. P. Edwards, S. T. Lees, K. E. Gibbons, I. Gameson, and M. Aindow, J. Mater. Res. JMREEE16, 3309 (2001). | en_US |
dc.identifier.citedreference | M. A. Zurbuchen, J. Lettieri, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, J. Mater. Res. JMREEE16, 489 (2001). | en_US |
dc.identifier.citedreference | M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, and H. Koinuma, Science SCIEAS266, 1540 (1994). | en_US |
dc.identifier.citedreference | T. Ohnishi, K. Takahashi, M. Nakamura, M. Kawasaki, M. Yoshimoto, and H. Koinuma, Appl. Phys. Lett. APPLAB74, 2531 (1999). | en_US |
dc.identifier.citedreference | Cubic indices; LaAlO3LaAlO3 is cubic at the film growth temperature, and transforms to rhombohedral on cooling. | en_US |
dc.identifier.citedreference | J.-P. Jacobs, M. A. San Miguel, and L. J. Alvarez, J. Mol. Struct.: THEOCHEM THEODJ390, 193 (1997). | en_US |
dc.identifier.citedreference | D.-W. Kim, D.-H. Kim, B.-S. Kang, T. W. Noh, D. R. Lee, and K.-B. Lee, Appl. Phys. Lett. APPLAB74, 2176 (1999). | en_US |
dc.identifier.citedreference | P. A. W. van der Heide and J. W. Rabalais, Chem. Phys. Lett. CHPLBC297, 350 (1998). | en_US |
dc.identifier.citedreference | S. Bals, G. Rijnders, D. H. A. Blank, and G. Van Tendeloo, Physica C PHYCE6355, 225 (2001). | en_US |
dc.identifier.citedreference | J. C. Jiang and X. Q. Pan, J. Appl. Phys. JAPIAU89, 6365 (2001). | en_US |
dc.identifier.citedreference | M. Salluzzo, C. Aruta, I. Maggio-Aprile, Ø. Fischer, S. Gals, and J. Zegenhagen, Phys. Status Solidi A PSSABA186, 339 (2001). | en_US |
dc.identifier.citedreference | M. A. Zurbuchen, J. Lettieri, G. Asayama, Y. Jia, A. H. Carim, D. G. Schlom, and S. K. Streiffer (unpublished). | en_US |
dc.identifier.citedreference | B. Aurivillius, Ark. Kemi ARKEAD1, 463 (1950); 1, 499 (1950); 2, 519 (1951); 5, 39 (1953). | en_US |
dc.identifier.citedreference | S. N. Ruddlesden and P. Popper, Acta Crystallogr. ACCRA910, 538 (1957); 11, 54 (1958). | en_US |
dc.identifier.citedreference | C. N. R. Rao and B. Raveau, Transition Metal Oxides: Structure, Properties, and Synthesis of Ceramic Oxides, 2nd ed. (Wiley, New York, 1998), p. 61. | en_US |
dc.identifier.citedreference | D. G. Schlom, J. H. Haeni, J. Lettieri, C. D. Theis, W. Tian, J. C. Jiang, and X. Q. Pan, Mater. Sci. Eng., B MSBTEK87, 282 (2001). | en_US |
dc.identifier.citedreference | B. Dam and B. Stäuble-Pümpin, J. Mater. Sci.: Mater. Electron. JSMEEV9, 217 (1998). | en_US |
dc.owningcollname | Physics, Department of |
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