Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75AsIn0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots

Phillips, J.; Kamath, Kishore K.; Bhattacharya, Pallab K.; Venkateswaran, U.

Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75AsIn0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots

dc.contributor.author	Phillips, J.	en_US
dc.contributor.author	Kamath, Kishore K.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.contributor.author	Venkateswaran, U.	en_US
dc.date.accessioned	2010-05-06T20:44:55Z
dc.date.available	2010-05-06T20:44:55Z
dc.date.issued	1999-03-01	en_US
dc.identifier.citation	Phillips, J.; Kamath, K.; Bhattacharya, P.; Venkateswaran, U. (1999). "Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75AsIn0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots." Journal of Applied Physics 85(5): 2997-2999. <http://hdl.handle.net/2027.42/69533>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/69533
dc.description.abstract	The photoluminescence spectra of large ensembles of self-organized In0.5Al0.5As/Al0.25Ga0.75AsIn0.5Al0.5As/Al0.25Ga0.75As quantum dots were studied. The spectra reveal a number of sharp peaks with energy separation and full width at half maximum values of ∼20 meV for 150 K ⩽ T ⩽ 275 K.150K⩽T⩽275K. Significant changes are observed in the luminescence characteristics with varying temperature, which are attributed to a changing distribution of photoexcited carriers between dots. © 1999 American Institute of Physics.	en_US
dc.format.extent	3102 bytes
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dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75AsIn0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Department of Electrical Engineering & Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, Michigan 48109-2122	en_US
dc.contributor.affiliationum	Department of Physics, Oakland University, Rochester, Michigan 48309	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/69533/2/JAPIAU-85-5-2997-1.pdf
dc.identifier.doi	10.1063/1.369618	en_US
dc.identifier.source	Journal of Applied Physics	en_US
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