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Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

dc.contributor.authorHong, Won‐Pyoen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T20:46:18Z
dc.date.available2010-05-06T20:46:18Z
dc.date.issued1987-03-09en_US
dc.identifier.citationHong, Won‐Pyo; Bhattacharya, Pallab K.; Singh, Jasprit (1987). "Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy." Applied Physics Letters 50(10): 618-620. <http://hdl.handle.net/2027.42/69548>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69548
dc.description.abstractAnomalous behavior in Hall data of molecular beam epitaxial In0.52Al0.48As/InP for T≥400 K suggests the presence of alloy clustering. The relaxation time for alloy clustering has been determined and analysis of measured data gives an estimate of composition fluctuation and cluster size. Evidence of clustering in the same samples is also obtained from the measured velocity‐field characteristics, low‐temperature photoluminescence data, and carrier impact ionization coefficients.en_US
dc.format.extent3102 bytes
dc.format.extent267592 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleNonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69548/2/APPLAB-50-10-618-1.pdf
dc.identifier.doi10.1063/1.98099en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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