Far‐infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells

Kim, Jae H.; Bhattacharya, Pallab K.; Singh, J.; Gulari, Erdogan

Far‐infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells

dc.contributor.author	Kim, Jae H.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.contributor.author	Singh, J.	en_US
dc.contributor.author	Gulari, Erdogan	en_US
dc.date.accessioned	2010-05-06T20:47:01Z
dc.date.available	2010-05-06T20:47:01Z
dc.date.issued	1990-05-07	en_US
dc.identifier.citation	Kim, J.‐H.; Bhattacharya, P. K.; Singh, J.; Gulari, E. (1990). "Far‐infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells." Applied Physics Letters 56(19): 1901-1902. <http://hdl.handle.net/2027.42/69556>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/69556
dc.description.abstract	Far‐infrared absorption spectra have been measured for molecular beam epitaxial InAs/Al0.36Ga0.64Sb multiquantum wells by Fourier transform infrared spectroscopy using light incident normal to the layers. The special band lineup for this heterostructure system causes an overlap of the electron and hole states. The measured absorption peak varies in the wavelength range of 5–10 μm in the temperature range of 100–300 K.	en_US
dc.format.extent	3102 bytes
dc.format.extent	238197 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Far‐infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122	en_US
dc.contributor.affiliationum	Department of Chemical Engineering, The University of Michigan, Ann Arbor, Michigan 48109‐2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/69556/2/APPLAB-56-19-1901-1.pdf
dc.identifier.doi	10.1063/1.103039	en_US
dc.identifier.source	Applied Physics Letters	en_US
dc.identifier.citedreference	J. M. Arias, R. E. DeWames, S. H. Shin, J. G. Pasko, J. S. Chen, and E. R. Gertner, Appl. Phys. Lett. 54, 1025 (1989).	en_US
dc.identifier.citedreference	J. P. Faurie, A. Million, R. Boch, and J. L. Tissot, J. Vac. Sci. Technol. A 1, 1953 (1983).	en_US
dc.identifier.citedreference	G. C. Osbourn, J. Vac. Sci. Technol. B 2, 176 (1984).	en_US
dc.identifier.citedreference	M. Y. Yen, R. People, K. W. Wecht, and A. Y. Cho, Appl. Phys. Lett. 52, 489 (1988).	en_US
dc.identifier.citedreference	D. D. Coon and R. P. G. Karunasiri, Appl. Phys. Lett. 45, 649 (1984).	en_US
dc.identifier.citedreference	L. C. West and S. J. Eglash, Appl. Phys. Lett. 46, 1156 (1985).	en_US
dc.identifier.citedreference	B. F. Levine, K. K. Choi, C. G. Bethea, J. Walker, and R. J. Malik, Appl. Phys. Lett. 50, 1092 (1987).	en_US
dc.identifier.citedreference	A. Harwitt and J. S. Harris, Appl. Phys. Lett. 50, 685 (1987).	en_US
dc.identifier.citedreference	X. Zhou, P. K. Bhattacharya, G. Hugo, S. C. Hong, and E. Gulari, Appl. Phys. Lett. 54, 855 (1989).	en_US
dc.identifier.citedreference	S. Hong, J. P. Loehr, J. E. Oh, P. K. Bhattacharya, and J. Singh, Appl. Phys. Lett. 55, 888 (1989).	en_US
dc.identifier.citedreference	L. Esaki, in Synthetic Modulated Structures, edited by L. L. Chang and B. C. Giessen (Academic, Orlando, FL, 1985), pp. 3–41.	en_US
dc.identifier.citedreference	H. Munekata, T. P. Smith, and L. L. Chang, presented at the Ninth Molecular Beam Epitaxy Workshop, West Lafayette, Indiana, September 1988.	en_US
dc.identifier.citedreference	S. R. Kurtz, G. C. Osbourn, R. M. Biefield, and S. R. Lee, Appl. Phys. Lett. 53, 216 (1988).	en_US
dc.owningcollname	Physics, Department of

Files in this item

Name:: APPLAB-56-19-1901-1.pdf
Size:: 232.6KB
Format:: PDF

View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.