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Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorTober, R. L.en_US
dc.contributor.authorLoehr, John P.en_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T20:49:32Z
dc.date.available2010-05-06T20:49:32Z
dc.date.issued1992-05-01en_US
dc.identifier.citationPamulapati, J.; Bhattacharya, P.; Tober, R. L.; Loehr, J. P.; Singh, J. (1992). "Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques." Journal of Applied Physics 71(9): 4487-4491. <http://hdl.handle.net/2027.42/69583>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69583
dc.description.abstractReflectance and photoluminescence spectroscopy have been used to study the optical properties of high quality InxGa1−xAs/GaAs (0.13≤x≤0.30) single quantum wells. The results show strong agreement with the theoretical model used taking into account the strain potential. The agreement of the theoretical model, though, deviates from the experimental results for large values of excess strain in the well. For the case of the large strain (x=0.30) the reflectance indicates the strain in the well is hydrostatic rather than biaxial. The relevance of this fact is discussed in relation to device performance.en_US
dc.format.extent3102 bytes
dc.format.extent463367 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCharacterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniquesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherU.S. Army Laboratory Command, Harry Diamond Laboratories, 2800 Powder Mill Road, Adelphi, Maryland 20783‐1197en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69583/2/JAPIAU-71-9-4487-1.pdf
dc.identifier.doi10.1063/1.350793en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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