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The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
dc.contributor.authorChoy, W. C. H.en_US
dc.contributor.authorHughes, P. J.en_US
dc.contributor.authorWeiss, B. L.en_US
dc.contributor.authorLi, E. H.en_US
dc.contributor.authorHong, K.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.date.accessioned2010-05-06T20:51:06Z
dc.date.available2010-05-06T20:51:06Z
dc.date.issued1998-01-19en_US
dc.identifier.citationChoy, W. C. H.; Hughes, P. J.; Weiss, B. L.; Li, E. H.; Hong, K.; Pavlidis, D. (1998). "The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures." Applied Physics Letters 72(3): 338-340. <http://hdl.handle.net/2027.42/69600>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69600
dc.description.abstractThe effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent70085 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleThe effect of growth interruption on the properties of InGaAs/InAlAs quantum well structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherSchool of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdomen_US
dc.contributor.affiliationotherDepartment of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kongen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69600/2/APPLAB-72-3-338-1.pdf
dc.identifier.doi10.1063/1.120729en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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