View Item 

Show simple item record

Growth of amorphous Ti2O3 layers by laser‐induced oxidation
dc.contributor.authorMerlin, R.en_US
dc.contributor.authorPerry, T. A.en_US
dc.date.accessioned2010-05-06T20:53:28Z
dc.date.available2010-05-06T20:53:28Z
dc.date.issued1984-10-15en_US
dc.identifier.citationMerlin, R.; Perry, T. A. (1984). "Growth of amorphous Ti2O3 layers by laser‐induced oxidation." Applied Physics Letters 45(8): 852-853. <http://hdl.handle.net/2027.42/69626>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69626
dc.description.abstractAmorphous Ti2O3 films with thicknesses ≳103 Å have been obtained by cw laser irradiation of Ti50Zr10Be40 exposed to low oxygen pressures. In contrast, thermal oxidation of (nonirradiated) samples reveals scales composed of crystalline oxides. Raman scattering, x‐ray, and electron microscopy data on the layers are reported. It is suggested that irradiation leads to an enhanced oxidation rate preventing crystallization. Possible mechanisms of enhancement are discussed.en_US
dc.format.extent3102 bytes
dc.format.extent138179 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleGrowth of amorphous Ti2O3 layers by laser‐induced oxidationen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69626/2/APPLAB-45-8-852-1.pdf
dc.identifier.doi10.1063/1.95424en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceN. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1949).en_US
dc.identifier.citedreferenceSee, e.g., A. T. Fromhold, Jr., in Theory of Metal Oxidation, edited by S. Amelincx, R. Gevers, and J. Nihoul (North‐Holland, Amsterdam, 1976), Vol. 1, pp. 1–9, 217–227.en_US
dc.identifier.citedreferenceThe system Al∕amorphous Al2O3Al2O3 is likely the most studied. See, e.g., K. G. Lynn, Phys. Rev. Lett. 44, 1330 (1980); A. Bianconi, R. Z. Bachrach, S. B. M. Hagstrom, and S. A. Flodström, Phys. Rev. B 19, 2837 (1979), and references therein.en_US
dc.identifier.citedreferenceSee, e.g., V. Brusic, in Oxides and Oxide Films, edited by J. W. Diggle (Decker, New York, 1972), Vol. 1, Chap. 1.en_US
dc.identifier.citedreferenceJ. Yahalom and J. Zahair, Electrochem. Acta 15, 1429 (1970).en_US
dc.identifier.citedreferenceE. M. Young, and W. A. Tiller, Appl. Phys. Lett. 42, 63 (1983).en_US
dc.identifier.citedreferenceS. A. Schafer and S. A. Lyon, J. Vac. Sci. Technol. 19, 494 (1981).en_US
dc.identifier.citedreferenceAn oxide film of unusual composition was reported for Ti irradiated with 1‐ms pulsed Nd laser, by A. G. Akimov, A. P. Gagarin, V. G. Dugarov, V. S. Makin, and S. D. Pudkov, Zh. Tekh. Fiz. 50, 2461 (1980) [Sov. Phys. Tech. Phys. 25, 1439 (1980)]. No reference to the structure of the layers was given.en_US
dc.identifier.citedreferenceSee, e.g., P. Kofstad, High‐Temperature Oxidation of Metals (Wiley, New York, 1966), p. 169, and references therein.en_US
dc.identifier.citedreferenceL. Porte, M. Demosthenous, and T. M. Due, J. Less Common Metals 56, 183 (1977).en_US
dc.identifier.citedreferenceT. Smith, Surf. Sci. 38, 292 (1973).en_US
dc.identifier.citedreferenceJ. B. Bignolas, M. Bujor, and J. Bardolle, Surf. Sci. 108, L453 (1981).en_US
dc.identifier.citedreferenceR. J. Nemanich, C. C. Tsai, and G. A. N. Connell, Phys. Rev. Lett. 44, 273 (1980).en_US
dc.identifier.citedreferenceG. Lucovsky, J. W. Allen, and R. Allen, in Physics of Semiconductors 1978, edited by B. L. H. Wilson (the Institute of Physics, London, 1979), p. 465.en_US
dc.identifier.citedreferenceObtained from the data of Ref. 14.en_US
dc.identifier.citedreferenceData similar to ours were reported for laser‐induced oxidation of Cu by M. I. Arzuov, A. I. Barchukov, F. V. Bunkin, N. A. Kirichenko, V. I. Konov, and B. S. Lu k’yanchuk, Kvantovaya Elektron 6, 466 (1979). [Sov. J. Quantum Electron. 9, 281 (1979)].en_US
dc.identifier.citedreferenceThe value for d≳δd≳δ was obtained from the Raman data using Stokes‐anti‐Stokes ratios. The estimate at t  =  0t=0 was calculated from expressions given by M. Lax, J. Appl. Phys. 48, 3919 (1977).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
APPLAB-45-8-852-1.pdf
Size:
134.9KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.