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Nucleation of chemical vapor deposited silicon nitride on silicon dioxide
dc.contributor.authorCopel, M.en_US
dc.contributor.authorVarekamp, P. R.en_US
dc.contributor.authorKisker, D. W.en_US
dc.contributor.authorMcFeely, F. R.en_US
dc.contributor.authorLitz, Kyle E.en_US
dc.contributor.authorBanaszak Holl, Mark M.en_US
dc.date.accessioned2010-05-06T20:54:06Z
dc.date.available2010-05-06T20:54:06Z
dc.date.issued1999-03-29en_US
dc.identifier.citationCopel, M.; Varekamp, P. R.; Kisker, D. W.; McFeely, F. R.; Litz, K. E.; Banaszak Holl, M. M. (1999). "Nucleation of chemical vapor deposited silicon nitride on silicon dioxide." Applied Physics Letters 74(13): 1830-1832. <http://hdl.handle.net/2027.42/69633>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69633
dc.description.abstractWe have studied the early stages of silicon nitride chemical vapor deposition (CVD) on silicon dioxide using medium energy ion scattering. The growth mode consists of island nucleation followed by coalescence. Similar behavior is observed for films grown using different precursors and reactor environments, indicating that the growth mode is caused by the fundamental nonwetting nature of the nitride/oxide interface under the conditions used for CVD. © 1999 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent61012 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleNucleation of chemical vapor deposited silicon nitride on silicon dioxideen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumChemistry Department, University of Michigan, Ann Arbor, Michigan 48109-1055en_US
dc.contributor.affiliationotherIBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69633/2/APPLAB-74-13-1830-1.pdf
dc.identifier.doi10.1063/1.123100en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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