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High resistivity and ultrafast carrier lifetime in argon implanted GaAs
dc.contributor.authorWalukiewicz, W.en_US
dc.contributor.authorLiliental‐weber, Z.en_US
dc.contributor.authorJasinski, J.en_US
dc.contributor.authorAlmonte, M.en_US
dc.contributor.authorPrasad, A.en_US
dc.contributor.authorHaller, E. E.en_US
dc.contributor.authorWeber, E. R.en_US
dc.contributor.authorGrenier, P.en_US
dc.contributor.authorWhitaker, John F.en_US
dc.date.accessioned2010-05-06T20:54:30Z
dc.date.available2010-05-06T20:54:30Z
dc.date.issued1996-10-21en_US
dc.identifier.citationWalukiewicz, W.; Liliental‐Weber, Z.; Jasinski, J.; Almonte, M.; Prasad, A.; Haller, E. E.; Weber, E. R.; Grenier, P.; Whitaker, J. F. (1996). "High resistivity and ultrafast carrier lifetime in argon implanted GaAs." Applied Physics Letters 69(17): 2569-2571. <http://hdl.handle.net/2027.42/69637>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69637
dc.description.abstractWe have investigated the optoelectronic and structural properties of GaAs that has been implanted with Ar ions and subsequently annealed. The material exhibits all the basic optical and electronic characteristics typically observed in nonstoichiometric, As implanted or low‐temperature‐grown GaAs. Annealing of Ar implanted GaAs at 600 °C produces a highly resistive material with a subpicosecond trapping lifetime for photoexcited carriers. Transmission electron microscopy shows that, instead of As precipitates, characteristic for the nonstoichiometeric GaAs, voids ranging in size from 3 to 5 nm are observed in Ar implanted and annealed GaAs. © 1996 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHigh resistivity and ultrafast carrier lifetime in argon implanted GaAsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherLawrence Berkeley National Laboratory, Berkeley, California 94720en_US
dc.contributor.affiliationotherLawrence Berkeley National Laboratory and University of California, Berkeley, California 94720en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69637/2/APPLAB-69-17-2569-1.pdf
dc.identifier.doi10.1063/1.117702en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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