Dependence of pseudomorphic semiconductor band gap on substrate orientation
dc.contributor.author | Hinckley, John M. | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.date.accessioned | 2010-05-06T20:54:59Z | |
dc.date.available | 2010-05-06T20:54:59Z | |
dc.date.issued | 1991-02-15 | en_US |
dc.identifier.citation | Hinckley, J. M.; Singh, J. (1991). "Dependence of pseudomorphic semiconductor band gap on substrate orientation." Journal of Applied Physics 69(4): 2694-2696. <http://hdl.handle.net/2027.42/69642> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69642 | |
dc.description.abstract | For a given misfit we examine the band‐gap variation of a pseudomorphic overlayer on a thick substrate as a function of substrate orientation. The strain tensor is found to be a strong function of the substrate orientation. For both direct and indirect band‐gap overlayers, this results in a significant variation in the band gap as the substrate orientation is changed. However, for indirect band‐gap layers, such as SiGe alloys grown on Si substrates, the change in band gap is accompanied by a lifting of conduction‐band‐edge degeneracies. The magnitude of this splitting may be as large or larger than the change in the band gap.<lz> <lz> <lz> | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 329282 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Dependence of pseudomorphic semiconductor band gap on substrate orientation | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69642/2/JAPIAU-69-4-2694-1.pdf | |
dc.identifier.doi | 10.1063/1.348670 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | J. M. Hinckley and J. Singh, Phys. Rev. B 42, 3546 (1990). | en_US |
dc.identifier.citedreference | M. Neuberger, Handbook of Electronic Materials (Plenum, New York, 1971). | en_US |
dc.identifier.citedreference | J. M. Hinckley, V. Sankaran, and J. Singh, Proceedings IEEE∕Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 141 (1989). | en_US |
dc.owningcollname | Physics, Department of |
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