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Dynamic growth effects during low-pressure deposition of diamond films

dc.contributor.authorGilbert, Donald R.en_US
dc.contributor.authorSingh, Rajiven_US
dc.contributor.authorClarke, Royen_US
dc.contributor.authorMurugkar, S.en_US
dc.date.accessioned2010-05-06T20:56:44Z
dc.date.available2010-05-06T20:56:44Z
dc.date.issued1997-04-14en_US
dc.identifier.citationGilbert, Donald R.; Singh, Rajiv; Clarke, Roy; Murugkar, S. (1997). "Dynamic growth effects during low-pressure deposition of diamond films." Applied Physics Letters 70(15): 1974-1976. <http://hdl.handle.net/2027.42/69661>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69661
dc.description.abstractDiamond films were deposited in a modified electron–cyclotron-resonance plasma system operating at pressures between 1.0 and 2.0 Torr. This system provides the advantage of efficient plasma generation due to magnetic enhancement and high diffusion rates due to relatively low-pressure operation. Films were formed from preexisting seed layers providing high “nucleation” densities to promote rapid coalescence. Raman analysis of grown films showed a quality dependence on both deposition pressure and nucleation density. We speculate that the increased presence of amorphous carbon and larger film stresses is the result of grain-boundary impurity effects in the seeded films. Oxygen addition improved film quality by reducing nondiamond carbon incorporation. © 1997 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent360711 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleDynamic growth effects during low-pressure deposition of diamond filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Applied Physics, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69661/2/APPLAB-70-15-1974-1.pdf
dc.identifier.doi10.1063/1.118796en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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