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Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K300 K
dc.contributor.authorHolub, M.en_US
dc.contributor.authorChakrabarti, S.en_US
dc.contributor.authorFathpour, S.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorLei, Y.en_US
dc.contributor.authorGhosh, S.en_US
dc.date.accessioned2010-05-06T20:58:28Z
dc.date.available2010-05-06T20:58:28Z
dc.date.issued2004-08-09en_US
dc.identifier.citationHolub, M.; Chakrabarti, S.; Fathpour, S.; Bhattacharya, P.; Lei, Y.; Ghosh, S. (2004). "Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K300 K." Applied Physics Letters 85(6): 973-975. <http://hdl.handle.net/2027.42/69680>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69680
dc.description.abstractThe magnetic and structural properties of InAs:Mn self-organized diluted magnetic quantum dots grown by low-temperature (∼270 °C)(∼270 °C), solid-source molecular-beam epitaxy using a very low InAs growth rate (<0.1 ML∕s)(<0.1 ML∕s) are investigated. A Curie temperature (TC)(TC) of ∼350 K∼350 K is measured in a sample grown with a Mn∕InMn∕In flux ratio of 0.15. Electron energy-loss spectroscopy confirms that most of the Mn remains within the InAs quantum dots. We propose as a possible explanation for this high TCTC the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms amongst the InAs quantum dots.en_US
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dc.format.extent257241 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K300 Ken_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherElectron Microscopy Center, Material Science Division, Argonne National Laboratory, Argonne, Illinois 60439en_US
dc.contributor.affiliationotherDepartment of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69680/2/APPLAB-85-6-973-1.pdf
dc.identifier.doi10.1063/1.1781361en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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