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Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler
dc.contributor.authorBerger, Paul R.en_US
dc.contributor.authorChen, Yien_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorVezzoli, G. C.en_US
dc.date.accessioned2010-05-06T20:58:34Z
dc.date.available2010-05-06T20:58:34Z
dc.date.issued1988-04-04en_US
dc.identifier.citationBerger, Paul R.; Chen, Yi; Bhattacharya, Pallab; Pamulapati, Jagadeesh; Vezzoli, G. C. (1988). "Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler." Applied Physics Letters 52(14): 1125-1127. <http://hdl.handle.net/2027.42/69681>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69681
dc.description.abstractThe performance characteristics of an AlGaAs dual waveguide vertical coupler with a nonlinear GaAs/AlGaAs multiquantum well coupling medium are demonstrated. The structure was grown by molecular beam epitaxy and fabricated by optical lithography and ion milling. The nonlinear coupling and modulation behavior is identical to that predicted theoretically. The nonlinear index of refraction and critical input power are estimated to be n2=1.67×10−5 cm2/W and Pc=170 W/cm2, respectively. This device also allows reliable measurement of the nonlinear refractive index for varying quantum well and optical excitation parameters.en_US
dc.format.extent3102 bytes
dc.format.extent340249 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleDemonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupleren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherU.S. Army Materials Technology Laboratory, Watertown, Massachusetts 02172‐0001en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69681/2/APPLAB-52-14-1125-1.pdf
dc.identifier.doi10.1063/1.99182en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceP. Li Kam Wa, J. E. Sitch, N. J. Mason, J. S. Roberts, and P. N. Robson, Electron. Lett. 21, 26 (1985).en_US
dc.identifier.citedreferenceU. Das, Y. Chen, and P. Bhattacharya, Appl. Phys. Lett. 51, 1679 (1987).en_US
dc.identifier.citedreferenceM. Cada, R. C. Gauthier, B. E. Paton, and J. Chrostowski, Appl. Phys. Lett. 49, 755 (1986).en_US
dc.identifier.citedreferenceS. M. Jensen, IEEE J. Quantum Electron. QE‐18, 1580 (1982).en_US
dc.owningcollnamePhysics, Department of


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