Electronic properties of ferroelectric BaTiO3∕MgOBaTiO3∕MgO capacitors on GaAs
dc.contributor.author | Murphy, T. E. | en_US |
dc.contributor.author | Chen, D. Y. | en_US |
dc.contributor.author | Phillips, J. D. | en_US |
dc.date.accessioned | 2010-05-06T20:59:42Z | |
dc.date.available | 2010-05-06T20:59:42Z | |
dc.date.issued | 2004-10-11 | en_US |
dc.identifier.citation | Murphy, T. E.; Chen, D.; Phillips, J. D. (2004). "Electronic properties of ferroelectric BaTiO3∕MgOBaTiO3∕MgO capacitors on GaAs." Applied Physics Letters 85(15): 3208-3210. <http://hdl.handle.net/2027.42/69693> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69693 | |
dc.description.abstract | Thin films of MgO and BaTiO3BaTiO3 were deposited on (001) GaAs substrates using molecular beam epitaxy and pulsed laser deposition, respectively. X-ray diffraction scans indicate crystalline MgO and BaTiO3BaTiO3 thin films with preferential cc-axis orientation. Capacitors fabricated from the BaTiO3∕MgO∕GaAsBaTiO3∕MgO∕GaAs structures demonstrate ferroelectric hysteresis behavior with a remenant polarization of 0.4 μC∕cm20.4 μC∕cm2. Small-signal capacitance measurements indicate an effective dielectric constant for the BaTiO3∕MgOBaTiO3∕MgO structure of 45.5ε045.5ε0. A hysteresis behavior indicative of ferroelectric switching is observed in the capacitance–voltage characteristics with a memory window of approximately 2 V. The observation of ferroelectric behavior in these materials are promising for future multifunctional devices on GaAs. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 53465 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/octet-stream | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Electronic properties of ferroelectric BaTiO3∕MgOBaTiO3∕MgO capacitors on GaAs | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69693/2/APPLAB-85-15-3208-1.pdf | |
dc.identifier.doi | 10.1063/1.1804237 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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