Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates
dc.contributor.author | Oh, J. E. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Chen, Y. C. | en_US |
dc.contributor.author | Tsukamoto, S. | en_US |
dc.date.accessioned | 2010-05-06T21:00:54Z | |
dc.date.available | 2010-05-06T21:00:54Z | |
dc.date.issued | 1989-10-15 | en_US |
dc.identifier.citation | Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S. (1989). "Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates." Journal of Applied Physics 66(8): 3618-3621. <http://hdl.handle.net/2027.42/69706> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69706 | |
dc.description.abstract | Epitaxial layers of InSb have been grown in InP and GaAs substrates by molecular‐beam epitaxy. The dependence of the epilayer quality on flux ratio, JSb4/JIn , was studied. Deviation from an optimum value of JSb4/JIn (∼2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room‐temperature electron mobilities as high as 70 000 and 53 000 cm2/V s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n type even at T=13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110 000 cm2/V s (3×1015 cm−3) and 55 000 cm2/V s (4.95×1015 cm−3), respectively, suggesting their application to electronic devices at cryogenic temperatures. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 457959 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/octet-stream | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69706/2/JAPIAU-66-8-3618-1.pdf | |
dc.identifier.doi | 10.1063/1.344069 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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