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Ionization Rates in (AlxGa1−x)As
dc.contributor.authorShabde, S. N.en_US
dc.contributor.authorYeh, C.en_US
dc.date.accessioned2010-05-06T21:05:45Z
dc.date.available2010-05-06T21:05:45Z
dc.date.issued1970-10en_US
dc.identifier.citationShabde, S. N.; Yeh, C. (1970). "Ionization Rates in (AlxGa1−x)As." Journal of Applied Physics 41(11): 4743-4744. <http://hdl.handle.net/2027.42/69753>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69753
dc.description.abstractThe ionization rates of (AlxGa1−x) As have been measured as a function of the Al content and the results are presented here. Values of both A and b are found to increase with Al content. It is also found that for low values of Al content, the ionization rates of (AlxGa1−x) As are consistent with Baraff's theory.en_US
dc.format.extent3102 bytes
dc.format.extent140760 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleIonization Rates in (AlxGa1−x)Asen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical Engineering, The University of Michigan, Ann Arbor, Michigan 48104en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69753/2/JAPIAU-41-11-4743-1.pdf
dc.identifier.doi10.1063/1.1658526en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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