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Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs

dc.contributor.authorHong, C. H.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorBrown, S. W.en_US
dc.contributor.authorRand, Stephen C.en_US
dc.date.accessioned2010-05-06T21:06:10Z
dc.date.available2010-05-06T21:06:10Z
dc.date.issued1995-02-15en_US
dc.identifier.citationHong, C. H.; Pavlidis, D.; Brown, S. W.; Rand, S. C. (1995). "Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs." Journal of Applied Physics 77(4): 1705-1709. <http://hdl.handle.net/2027.42/69757>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69757
dc.description.abstractGaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band‐edge photoluminescence near 3.36 eV and 3.15–3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon‐assisted, donor‐acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics.en_US
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dc.format.extent643815 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePhotoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electronic Engineering and Computational Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69757/2/JAPIAU-77-4-1705-1.pdf
dc.identifier.doi10.1063/1.358862en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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