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Recombination characteristics of minority carriers near the AlxOy/GaAsAlxOy/GaAs interface using the light beam induced current technique
dc.contributor.authorGebretsadik, H.en_US
dc.contributor.authorZhang, K.en_US
dc.contributor.authorKamath, Kishore K.en_US
dc.contributor.authorZhang, X.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:07:36Z
dc.date.available2010-05-06T21:07:36Z
dc.date.issued1997-12-29en_US
dc.identifier.citationGebretsadik, H.; Zhang, K.; Kamath, K.; Zhang, X.; Bhattacharya, P. (1997). "Recombination characteristics of minority carriers near the AlxOy/GaAsAlxOy/GaAs interface using the light beam induced current technique." Applied Physics Letters 71(26): 3865-3867. <http://hdl.handle.net/2027.42/69772>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69772
dc.description.abstractThe light beam induced current (LBIC) technique was used to characterize the interface formed by the wet oxidation of AlAs and AlxGa1−xAsAlxGa1−xAs (x = 0.98(x=0.98 and 0.95). LBIC scans were used to calculate the diffusion lengths of minority carriers both in the bulk and near these interfaces; and the corresponding interface recombination velocities were estimated. The interface recombination velocity at the oxide/semiconductor interface is 3.13×105 cm/s3.13×105cm/s for AlAs, and 1.90×104 cm/s1.90×104cm/s for Al0.98Ga0.02As.Al0.98Ga0.02As. It is found that the addition of gallium in the AlAs can significantly improve this property. © 1997 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent303060 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleRecombination characteristics of minority carriers near the AlxOy/GaAsAlxOy/GaAs interface using the light beam induced current techniqueen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69772/2/APPLAB-71-26-3865-1.pdf
dc.identifier.doi10.1063/1.120545en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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