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Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor
dc.contributor.authorJackson, M. K.en_US
dc.contributor.authorFrankel, M. Y.en_US
dc.contributor.authorWhitaker, John F.en_US
dc.contributor.authorMourou, Gerard A.en_US
dc.contributor.authorHulin, D.en_US
dc.contributor.authorAntonetti, A.en_US
dc.contributor.authorVan Hove, M.en_US
dc.contributor.authorDe Raedt, W.en_US
dc.contributor.authorCrozat, P.en_US
dc.contributor.authorHafdallah, H.en_US
dc.date.accessioned2010-05-06T21:10:30Z
dc.date.available2010-05-06T21:10:30Z
dc.date.issued1992-09-07en_US
dc.identifier.citationJackson, M. K.; Frankel, M. Y.; Whitaker, J. F.; Mourou, G. A.; Hulin, D.; Antonetti, A.; Van Hove, M.; De Raedt, W.; Crozat, P.; Hafdallah, H. (1992). "Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor." Applied Physics Letters 61(10): 1187-1189. <http://hdl.handle.net/2027.42/69803>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69803
dc.description.abstractWe present the first comprehensive study of the large‐signal switching characteristics of an AlGaAs/InGaAs modulation‐doped field‐effect transistor on a picosecond time scale. Electro‐optic sampling is used to measure drain voltage response to a steplike gate input with a 2.8 ps rise time, at various dc biases. A large‐signal switching time of 6.2 ps is obtained. Features deleterious to high‐frequency device operation are observed, related to equivalent circuit parameters, and reduced by appropriate choice of operating point.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePicosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistoren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109‐2099en_US
dc.contributor.affiliationotherLaboratoire d’Optique Appliquée, E.N.S.T.A.‐Ecole Polytechnique, Centre de l’Yvette, 91120 Palaiseau, Franceen_US
dc.contributor.affiliationotherNaval Research Laboratory, Washington, DC 20375en_US
dc.contributor.affiliationotherLaboratoire d’Optique Appliquée, E.N.S.T.A.‐Ecole Polytechnique, Centre de l’Yvette, 91120 Palaiseau, Franceen_US
dc.contributor.affiliationotherInteruniversity Microelectronics Center, Kapeldreef 75, B‐3001 Leuven, Belgiumen_US
dc.contributor.affiliationotherInstitut d’Electronique Fondamentale, Université Paris Sud, 91405 Orsay Cedex, Franceen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69803/2/APPLAB-61-10-1187-1.pdf
dc.identifier.doi10.1063/1.107642en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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