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Impact ionization coefficients in Si1−xGex
dc.contributor.authorLee, J.en_US
dc.contributor.authorGutierrez‐aitken, A. L.en_US
dc.contributor.authorLi, S. H.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:11:35Z
dc.date.available2010-05-06T21:11:35Z
dc.date.issued1995-01-09en_US
dc.identifier.citationLee, J.; Gutierrez‐Aitken, A. L.; Li, S. H.; Bhattacharya, P. K. (1995). "Impact ionization coefficients in Si1−xGex." Applied Physics Letters 66(2): 204-205. <http://hdl.handle.net/2027.42/69815>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69815
dc.description.abstractWe have measured the electron and hole impact ionization coefficients in Si1−xGex alloys. Carrier multiplication measurements were made on relaxed Si1−xGex/Si diodes grown by gas source molecular beam epitaxy. The hole to electron impact ionization coefficient ratio, β/α, varies from 0.3 to 4 in the composition range of x=0.08–1.0. © 1995 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent102229 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleImpact ionization coefficients in Si1−xGexen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69815/2/APPLAB-66-2-204-1.pdf
dc.identifier.doi10.1063/1.113134en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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