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Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorDhar, Sunandaen_US
dc.contributor.authorBerger, Paulen_US
dc.contributor.authorJuang, Feng‐Yuhen_US
dc.date.accessioned2010-05-06T21:12:09Z
dc.date.available2010-05-06T21:12:09Z
dc.date.issued1986-08-25en_US
dc.identifier.citationBhattacharya, Pallab K.; Dhar, Sunanda; Berger, Paul; Juang, Feng‐Yuh (1986). "Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping." Applied Physics Letters 49(8): 470-472. <http://hdl.handle.net/2027.42/69821>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69821
dc.description.abstractWe have studied the effects of adding small amounts of In (0.2–1.2%) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by F. Briones and D. M. Collins [J. Electron. Mater. 11, 847 (1982)] and B. J. Skromme, S. S. Bose, B. Lee, T. S. Low, T. R. Lepkowski, R‐Y. DeJule, G. E. Stillman, and J. C. M. Hwang [J. Appl. Phys. 58, 4702 (1985)].en_US
dc.format.extent3102 bytes
dc.format.extent213486 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In dopingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69821/2/APPLAB-49-8-470-1.pdf
dc.identifier.doi10.1063/1.97119en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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