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Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs

dc.contributor.authorChang, Kevin H.en_US
dc.contributor.authorBerger, Paul R.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:12:20Z
dc.date.available2010-05-06T21:12:20Z
dc.date.issued1987-07-27en_US
dc.identifier.citationChang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. (1987). "Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs." Applied Physics Letters 51(4): 261-263. <http://hdl.handle.net/2027.42/69823>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69823
dc.description.abstractThis letter reports the successful molecular beam epitaxial growth of high‐quality InxGa1−xAs/InxAl1−xAs directly on GaAs. In situ observation of dynamic high‐energy electron diffraction oscillations during growth of InxGa1−xAs on GaAs indicates that the average cation migration rates are reduced due to the surface strain. By raising the growth temperature to enhance the migration rate and by using misoriented epitaxy to limit the propagation of threading and screw dislocations, we have grown device‐quality In0.15Ga0.85As/In0.15Al0.85As multiquantum wells on GaAs with a 0.5–1.0 μm In0.15Ga0.85As buffer layer. The luminescence efficiency of the bound exciton peak increases with misorientation and its linewidth varies from 11 to 15 meV.en_US
dc.format.extent3102 bytes
dc.format.extent266980 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMolecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69823/2/APPLAB-51-4-261-1.pdf
dc.identifier.doi10.1063/1.98467en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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