Site symmetry analysis of the 738 nm defect in diamond
dc.contributor.author | Brown, S. W. | en_US |
dc.contributor.author | Rand, Stephen C. | en_US |
dc.date.accessioned | 2010-05-06T21:12:31Z | |
dc.date.available | 2010-05-06T21:12:31Z | |
dc.date.issued | 1995-09-15 | en_US |
dc.identifier.citation | Brown, S. W.; Rand, S. C. (1995). "Site symmetry analysis of the 738 nm defect in diamond." Journal of Applied Physics 78(6): 4069-4075. <http://hdl.handle.net/2027.42/69825> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69825 | |
dc.description.abstract | Based on a detailed analysis of polarized Raman and luminescence measurements of a ‘‘mosaic’’ diamond film, symmetry properties of a ubiquitous point defect observed in diamond films are determined. Specifically, the defect, which gives rise to emission at 738 nm, is determined unequivocally to be a 〈110〉‐oriented defect with the transition dipole moment of the center oriented along the 〈110〉 symmetry axis. These results represent the first analysis of the symmetry properties of this point defect and aid in the development of structural model of the center. © 1995 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 958057 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Site symmetry analysis of the 738 nm defect in diamond | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Division of Applied Physics, 1049 Randall Laboratory, The University of Michigan, Ann Arbor, Michigan 48109‐1120 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69825/2/JAPIAU-78-6-4069-1.pdf | |
dc.identifier.doi | 10.1063/1.359864 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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