Gate leakage suppression and contact engineering in nitride heterostructures
dc.contributor.author | Wu, Yuh-Renn | en_US |
dc.contributor.author | Singh, Madhusudan | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.date.accessioned | 2010-05-06T21:13:55Z | |
dc.date.available | 2010-05-06T21:13:55Z | |
dc.date.issued | 2003-11-01 | en_US |
dc.identifier.citation | Wu, Yuh-Renn; Singh, Madhusudan; Singh, Jasprit (2003). "Gate leakage suppression and contact engineering in nitride heterostructures." Journal of Applied Physics 94(9): 5826-5831. <http://hdl.handle.net/2027.42/69840> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69840 | |
dc.description.abstract | We present a self-consistent approach to examine current flow in a general metal–polar heterostructure junction. The approach is applied to examine properties of three classes of junctions that are important in devices: (i) GaN/AlGaN structures that are used in nitride heterojunction field effect transistors; (ii) GaN/AlGaN/high-κ insulator structures for potential application in very small gate devices to suppress gate tunneling current; and (iii) GaN/AlGaN/polar insulator junctions with practical application for low source resistance regions. The physical parameters used for high-κ dielectrics and polarization charges reflect values typically found in ferroelectric materials. Our studies indicate that tailoring of junction properties is possible if a dielectric thicknesses of ∼20 Å∼20 Å can be achieved. © 2003 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 157853 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Gate leakage suppression and contact engineering in nitride heterostructures | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69840/2/JAPIAU-94-9-5826-1.pdf | |
dc.identifier.doi | 10.1063/1.1618926 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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