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Fabrication of elastomeric stamps with polymer-reinforced sidewalls via chemically selective vapor deposition polymerization of poly(p-xylylene)

dc.contributor.authorSuh, Kahp Y.en_US
dc.contributor.authorLanger, Robert S.en_US
dc.contributor.authorLahann, Jörgen_US
dc.date.accessioned2010-05-06T21:14:28Z
dc.date.available2010-05-06T21:14:28Z
dc.date.issued2003-11-17en_US
dc.identifier.citationSuh, Kahp Y.; Langer, Robert; Lahann, Jörg (2003). "Fabrication of elastomeric stamps with polymer-reinforced sidewalls via chemically selective vapor deposition polymerization of poly(p-xylylene)." Applied Physics Letters 83(20): 4250-4252. <http://hdl.handle.net/2027.42/69846>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69846
dc.description.abstractWe report on the preparation of polydimethylsiloxane stamps with selectively grown polymer sidewalls by chemical vapor deposition polymerization of poly(ppoly(p-xylylene). Using a thin iron layer as an inhibitor, the deposition occurs only on the sidewalls of the features in relief, resulting in a polymer-reinforced stamp. The wetting properties of stamps can be restored after removing the thin iron layer with an acidic solution, which has been verified by pattern transfer to an underlying substrate using molding and microcontact printing. © 2003 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent263695 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleFabrication of elastomeric stamps with polymer-reinforced sidewalls via chemically selective vapor deposition polymerization of poly(p-xylylene)en_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69846/2/APPLAB-83-20-4250-1.pdf
dc.identifier.doi10.1063/1.1628392en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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