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Hot filament enhanced chemical vapor deposition of AlN thin films
dc.contributor.authorDupuie, Jeffrey L.en_US
dc.contributor.authorGulari, Erdoganen_US
dc.date.accessioned2010-05-06T21:15:17Z
dc.date.available2010-05-06T21:15:17Z
dc.date.issued1991-07-29en_US
dc.identifier.citationDupuie, Jeffrey L.; Gulari, Erdogan (1991). "Hot filament enhanced chemical vapor deposition of AlN thin films." Applied Physics Letters 59(5): 549-551. <http://hdl.handle.net/2027.42/69855>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69855
dc.description.abstractHot filament enhanced chemical vapor deposition of aluminum nitride thin films from trimethylaluminum and ammonia has been investigated for deposition temperatures ranging from 584 to 732 K. The use of a hot filament resulted in an approximate two orders of magnitude increase in the deposition rate compared to a similar, uncatalyzed growth. The film deposition rate and refractive index did not depend on the substrate temperature. X‐ray photoelectron spectroscopy and Fourier‐transform infrared spectroscopy indicated that the films were high purity aluminum nitride, with negligible carbon and oxygen contamination.  en_US
dc.format.extent3102 bytes
dc.format.extent332352 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHot filament enhanced chemical vapor deposition of AlN thin filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical Engineering, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69855/2/APPLAB-59-5-549-1.pdf
dc.identifier.doi10.1063/1.105410en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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