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Lateral composition modulation in mixed anion multilayers

dc.contributor.authorDorin, C.en_US
dc.contributor.authorMirecki-Millunchick, Joannaen_US
dc.contributor.authorWauchope, C.en_US
dc.date.accessioned2010-05-06T21:15:49Z
dc.date.available2010-05-06T21:15:49Z
dc.date.issued2002-10-28en_US
dc.identifier.citationDorin, C.; Mirecki Millunchick, J.; Wauchope, C. (2002). "Lateral composition modulation in mixed anion multilayers." Applied Physics Letters 81(18): 3368-3370. <http://hdl.handle.net/2027.42/69861>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69861
dc.description.abstractLateral composition modulation on the group V sublattice has been observed in GaAs/GaSb short period superlattices. Cross sectional transmission electron microscopy and x-ray diffraction reciprocal space maps reveal that all structures are phase-separated with Sb compositions for the strongest modulated structure of x = 0.73x=0.73 in the Sb-rich regions, x = 0.55x=0.55 in the As-rich regions, and wavelengths 15 ⩽ Λ ⩽ 20 nm.15⩽Λ⩽20nm. The composition modulation observed in these films is not due to spinodal decomposition, because an alloy grown at the same conditions results in a homogeneous layer, but may be related to vertical stacking of quantum dots that nucleate during the growth of the structure. © 2002 American Institute of Physics.en_US
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dc.format.extent245422 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLateral composition modulation in mixed anion multilayersen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationumElectron Microbeam Analysis Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2143en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69861/2/APPLAB-81-18-3368-1.pdf
dc.identifier.doi10.1063/1.1517712en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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