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Gas‐source molecular‐beam epitaxy using Si2H6 and GeH4 and x‐ray characterization of Si1−xGex (0≤x≤0.33) alloys
dc.contributor.authorLi, S. H.en_US
dc.contributor.authorChung, S. W.en_US
dc.contributor.authorRhee, J. K.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:15:55Z
dc.date.available2010-05-06T21:15:55Z
dc.date.issued1992-05-15en_US
dc.identifier.citationLi, S. H.; Chung, S. W.; Rhee, J. K.; Bhattacharya, P. K. (1992). "Gas‐source molecular‐beam epitaxy using Si2H6 and GeH4 and x‐ray characterization of Si1−xGex (0≤x≤0.33) alloys." Journal of Applied Physics 71(10): 4916-4919. <http://hdl.handle.net/2027.42/69862>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69862
dc.description.abstractGas‐source molecular‐beam epitaxy (MBE) has been used to grow SiGe alloys with Si2H6 and GeH4 as sources on (100) Si substrates. Single‐crystalline epilayers with Ge composition as high as 33% have been produced at 610 °C, the lowest temperature hitherto used for gas‐source SiGe MBE. Growth parameters, growth modes, and the structural characteristics have been studied by a variety of in situ and ex situ techniques. Double‐crystal x‐ray diffraction data for the alloys have been obtained for the first time in thin mismatched layers.en_US
dc.format.extent3102 bytes
dc.format.extent486902 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleGas‐source molecular‐beam epitaxy using Si2H6 and GeH4 and x‐ray characterization of Si1−xGex (0≤x≤0.33) alloysen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid‐State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69862/2/JAPIAU-71-10-4916-1.pdf
dc.identifier.doi10.1063/1.350639en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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