Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGex using phosphine
dc.contributor.author | Li, S. H. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T21:20:44Z | |
dc.date.available | 2010-05-06T21:20:44Z | |
dc.date.issued | 1994-08-15 | en_US |
dc.identifier.citation | Li, S. H.; Bhattacharya, P. K. (1994). "Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGex using phosphine." Journal of Applied Physics 76(4): 2213-2215. <http://hdl.handle.net/2027.42/69914> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69914 | |
dc.description.abstract | Well‐behaved and reproducible n‐type doping of Si and Si1−xGex by phosphine during gas‐source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017–1019 cm−3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The doping profiles are well defined in both Si and Si1−xGex layers. A p‐Si0.9Ge0.1/n‐Si heterojunction diode made with boron and phosphine doping has demonstrated excellent rectifying characteristics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 379631 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGex using phosphine | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid‐State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69914/2/JAPIAU-76-4-2213-1.pdf | |
dc.identifier.doi | 10.1063/1.357636 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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