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Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching
dc.contributor.authorTiginyanu, I. M.en_US
dc.contributor.authorUrsaki, V. V.en_US
dc.contributor.authorZalamai, V. V.en_US
dc.contributor.authorLanga, S.en_US
dc.contributor.authorHubbard, Seth M.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorFöll, H.en_US
dc.date.accessioned2010-05-06T21:20:55Z
dc.date.available2010-05-06T21:20:55Z
dc.date.issued2003-08-25en_US
dc.identifier.citationTiginyanu, I. M.; Ursaki, V. V.; Zalamai, V. V.; Langa, S.; Hubbard, S.; Pavlidis, D.; Föll, H. (2003). "Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching." Applied Physics Letters 83(8): 1551-1553. <http://hdl.handle.net/2027.42/69916>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69916
dc.description.abstractGaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence spectroscopy characterization shows that the as-grown bulk GaN layers suffer from compressive biaxial strain of 0.5 GPa. The majority of nanocolumns are fully relaxed from strain, and the room-temperature luminescence is free excitonic. The high quality of the columnar nanostructures evidenced by the enhanced intensity of the exciton luminescence and by the decrease of the yellow luminescence is explained by the peculiarities of the anodic etching processing. © 2003 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLuminescence of GaN nanocolumns obtained by photon-assisted anodic etchingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumEECS Department, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherLaboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, MD-2004 Chisinau, Moldovaen_US
dc.contributor.affiliationotherDeparment of Materials Science, Christian-Albrechts University of Kiel, Kaiserstrasse 2, D-24143 Kiel, Germanyen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69916/2/APPLAB-83-8-1551-1.pdf
dc.identifier.doi10.1063/1.1605231en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceS. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 JAPLD834, L797 (1995).en_US
dc.identifier.citedreferenceS. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sagimoto, and H. Kiyoku, Jpn. J. Appl. Phys., Part 2 JAPLD836, L1059 (1997).en_US
dc.identifier.citedreferenceM. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, Appl. Phys. Lett. APPLAB65, 1121 (1994).en_US
dc.identifier.citedreferenceH. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. JAPIAU76, 1363 (1994).en_US
dc.identifier.citedreferenceB. J. Scromme, MRS Internet J. Nitride Semicond. Res. MIJNF74, 15 (1999).en_US
dc.identifier.citedreferenceGallium Nitride (GaN) II, Semiconductors and Semimetals, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, CA, 1999), Vol. 57, Chaps. 6 and 7.en_US
dc.identifier.citedreferenceJ. Zhang, L. D. Zhang, X. F. Wang, C. H. Liang, X. S. Peng, and Y. W. Wang, J. Chem. Phys. JCPSA6115, 5714 (2001).en_US
dc.identifier.citedreferenceH. W. Seo, S. Y. Bae, J. Park, H. Yang, K. S. Park, and S. Kim, J. Chem. Phys. JCPSA6116, 9492 (2002).en_US
dc.identifier.citedreferenceI. M. Tiginyanu, I. V. Kravetsky, J. Monecke, W. Cordts, G. Marowsky, and H. L. Hartnagel, Appl. Phys. Lett. APPLAB77, 2415 (2000).en_US
dc.identifier.citedreferenceG. Chen, T. Zeng, T. Borca-Tasciuc, and D. Song, Mater. Sci. Eng., A MSAPE3292, 155 (2000).en_US
dc.identifier.citedreferenceA. Sarua, J. Monecke, G. Irmer, I. M. Tiginyanu, G. Gärtner, and H. L. Hartnagel, J. Phys.: Condens. Matter JCOMEL13, 6687 (2001).en_US
dc.identifier.citedreferenceM. Mynbaeva, A. Titkov, A. Kryganovski, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho, and V. Dmitriev, Appl. Phys. Lett. APPLAB76, 1113 (2000).en_US
dc.identifier.citedreferenceV. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, Phys. Rev. B PRBMDO62, 16826 (2000).en_US
dc.identifier.citedreferenceI. M. Tiginyanu, A. Sarua, G. Irmer, J. Monecke, S. M. Hubbard, D. Pavlidis, and V. Valiaev, Phys. Rev. B PRBMDO64, 233317 (2001).en_US
dc.identifier.citedreferenceK. Kornitzer, T. Ebner, M. Grehl, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Status Solidi B PSSBBD216, 5 (1999).en_US
dc.identifier.citedreferenceG. G. Sim, P. W. Yu, D. C. Reynolds, D. C. Look, S. S. Kim, and D. Y. Noh, Mater. Res. Soc. Symp. Proc. MRSPDH693, 13.33.1 (2002).en_US
dc.identifier.citedreferenceV. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, J. Appl. Phys. JAPIAU82, 5097 (1997).en_US
dc.identifier.citedreferenceC. F. Klingshirn, Semiconductor Optics (Springer, Berlin 1997).en_US
dc.identifier.citedreferenceJ. R. Haynes, Phys. Rev. Lett. PRLTAO4, 361 (1960).en_US
dc.identifier.citedreferenceA. K. Viswanath, J. I. Lee, S. Yu, D. Kim, Y. Choi, and C.-H. Hong, J. Appl. Phys. JAPIAU84, 3848 (1998).en_US
dc.identifier.citedreferenceY. P. Varshni, Physica (Amsterdam) PHYSAG34, 149 (1967).en_US
dc.identifier.citedreferenceI. M. Tiginyanu, C. Schwab, J.-J. Grob, B. Prevot, H. L. Hartnagel, A. Vogt, G. Irmer, and J. Monecke, Appl. Phys. Lett. APPLAB71, 3829 (1997).en_US
dc.identifier.citedreferenceF. A. Ponce, D. P. Bour, W. Götz, and P. J. Wright, Appl. Phys. Lett. APPLAB68, 57 (1996).en_US
dc.owningcollnamePhysics, Department of


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