High-detectivity, normal-incidence, mid-infrared (λ ∼ 4 μm)InAs/GaAs(λ∼4μm)InAs/GaAs quantum-dot detector operating at 150 K
dc.contributor.author | Stiff, A. D. | en_US |
dc.contributor.author | Krishna, Sanjay | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Kennerly, S. | en_US |
dc.date.accessioned | 2010-05-06T21:22:16Z | |
dc.date.available | 2010-05-06T21:22:16Z | |
dc.date.issued | 2001-07-16 | en_US |
dc.identifier.citation | Stiff, A. D.; Krishna, S.; Bhattacharya, P.; Kennerly, S. (2001). "High-detectivity, normal-incidence, mid-infrared (λ ∼ 4 μm)InAs/GaAs(λ∼4μm)InAs/GaAs quantum-dot detector operating at 150 K." Applied Physics Letters 79(3): 421-423. <http://hdl.handle.net/2027.42/69931> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69931 | |
dc.description.abstract | Normal-incidence InAs/GaAs quantum-dot detectors have been grown, fabricated, and characterized for mid-infrared detection in the temperature range from 78 to 150 K. Due to the presence of an Al0.3Ga0.7AsAl0.3Ga0.7As current blocking layer in the heterostructure, the dark current is very low, and at T = 100 K,T=100K, Idark = 1.7 pAIdark=1.7pA for Vbias = 0.1 V.Vbias=0.1V. The peak of the spectral response curve is at λ ∼ 4 μm,λ∼4μm, with Δλ/λ = 0.3Δλ/λ=0.3 and Vbias = 0.1 V.Vbias=0.1V. At T = 100 K,T=100K, for Vbias = 0.3 V,Vbias=0.3V, the peak detectivity, D∗,D∗, is 3×109 cm Hz1/2/W,3×109cmHz1/2/W, and the peak responsivity, Rp,Rp, is 2 mA/W with a photoconductive gain of g = 18.g=18. © 2001 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 55491 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | High-detectivity, normal-incidence, mid-infrared (λ ∼ 4 μm)InAs/GaAs(λ∼4μm)InAs/GaAs quantum-dot detector operating at 150 K | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationother | Sensors and Electron Devices Directorate, Army Research Laboratory, Adelphi, Maryland 20783 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69931/2/APPLAB-79-3-421-1.pdf | |
dc.identifier.doi | 10.1063/1.1385584 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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