Extrinsic transient diffusion in silicon
dc.contributor.author | Giles, Martin D. | en_US |
dc.date.accessioned | 2010-05-06T21:23:08Z | |
dc.date.available | 2010-05-06T21:23:08Z | |
dc.date.issued | 1991-05-27 | en_US |
dc.identifier.citation | Giles, Martin D. (1991). "Extrinsic transient diffusion in silicon." Applied Physics Letters 58(21): 2399-2401. <http://hdl.handle.net/2027.42/69940> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69940 | |
dc.description.abstract | The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion‐implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of the opposite type. Analysis of the relative enhancements for boron and phosphorous allows the position of the donor and acceptor levels for the silicon self‐interstitial to be extracted. The results are in good agreement with earlier work based on extrinsic oxidation‐enhanced diffusion. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 382522 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Extrinsic transient diffusion in silicon | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69940/2/APPLAB-58-21-2399-1.pdf | |
dc.identifier.doi | 10.1063/1.104883 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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