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Origins of luminescence from nitrogen-ion-implanted epitaxial GaAsGaAs
dc.contributor.authorWeng, X.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.contributor.authorRotberg, V. H. (Victor H.)en_US
dc.contributor.authorBataiev, N.en_US
dc.contributor.authorBrillson, L. J.en_US
dc.date.accessioned2010-05-06T21:23:19Z
dc.date.available2010-05-06T21:23:19Z
dc.date.issued2004-10-04en_US
dc.identifier.citationWeng, X.; Goldman, R. S.; Rotberg, V.; Bataiev, N.; Brillson, L. J. (2004). "Origins of luminescence from nitrogen-ion-implanted epitaxial GaAsGaAs." Applied Physics Letters 85(14): 2774-2776. <http://hdl.handle.net/2027.42/69942>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69942
dc.description.abstractWe have examined the origins of luminescence in N-ion-implanted epitaxial GaAsGaAs, using a combination of cross-sectional transmission electron microscopy and low-energy electron-excited nanoscale-luminescence spectroscopy. A comparison of reference, as-implanted, and implanted-plus-annealed samples reveals a variety of emissions. In all samples, we observe the GaAsGaAs fundamental band-gap emission, as well as several emissions related to GaAsGaAs native defects. In the as-implanted and implanted-plus-annealed samples, an emission related to the implantation-induced defects, is also observed. Interestingly, in the implanted-plus-annealed samples, we identify a near-infrared emission associated with GaAsNGaAsN nanocrystallites.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleOrigins of luminescence from nitrogen-ion-implanted epitaxial GaAsGaAsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumDepartment of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, Ohio State University, Columbus, Ohio 43210-1272en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69942/2/APPLAB-85-14-2774-1.pdf
dc.identifier.doi10.1063/1.1803940en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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