View Item 

Show simple item record

Observation of near‐band‐gap luminescence from boron nitride films
dc.contributor.authorTaylor, C. A.en_US
dc.contributor.authorBrown, S. W.en_US
dc.contributor.authorSubramaniam, V.en_US
dc.contributor.authorKidner, S.en_US
dc.contributor.authorRand, Stephen C.en_US
dc.contributor.authorClarke, Royen_US
dc.date.accessioned2010-05-06T21:23:52Z
dc.date.available2010-05-06T21:23:52Z
dc.date.issued1994-09-05en_US
dc.identifier.citationTaylor, C. A.; Brown, S. W.; Subramaniam, V.; Kidner, S.; Rand, S. C.; Clarke, R. (1994). "Observation of near‐band‐gap luminescence from boron nitride films." Applied Physics Letters 65(10): 1251-1253. <http://hdl.handle.net/2027.42/69948>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69948
dc.description.abstractWe report results from cathodoluminescence spectroscopy of boron nitride films grown on Si(100) substrates by ion‐source‐assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near‐band‐gap region for hexagonal boron nitride films at energies of 4.90, 5.31, and 5.50 eV. We also report deep‐level emission spectra of predominantly cubic boron nitride films which are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.en_US
dc.format.extent3102 bytes
dc.format.extent400586 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleObservation of near‐band‐gap luminescence from boron nitride filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumHarrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109‐1120en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69948/2/APPLAB-65-10-1251-1.pdf
dc.identifier.doi10.1063/1.112086en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceDiamond, SiC and Nitride Wide-bandgap Semiconductors, edited by C. H. Carter, G. Gildenblaf, S. Nakamura, and R. J. Nemanich, San Francisco, CA, 1994 [Mater. Res. Soc. Symp. Proc. 339, (1994)].en_US
dc.identifier.citedreferenceS. Kidner, C. A. Taylor II, and R. Clarke, Appl. Phys. Lett. 64, 1859 (1994).en_US
dc.identifier.citedreferenceS. Larach and R. E. Shrader, Phys. Rev. 104, 68 (1956).en_US
dc.identifier.citedreferenceN. J. Pipkin, J. Mater. Sci. 15, 2651 (1980).en_US
dc.identifier.citedreferenceV. B. Shipilo, E. M. Shishonok, A. M. Zaitsev, A. A. Melnikov, and A. I. Olekhnovich, Phys. Status Solidi A 108, 431 (1988).en_US
dc.identifier.citedreferenceO. Mishima, K. Era, J. Tanaka, and S. Yamaoka, Appl. Phys. Lett. 53, 962 (1988).en_US
dc.identifier.citedreferenceE. M. Shishonok, V. B. Shipilo, A. I. Lukomskii, and T. V. Rapinchuk, Phys. Status Solidi A 115, K237 (1989).en_US
dc.identifier.citedreferenceV. B. Shipilo, A. I. Lukomskii, and L. M. Gameza, Zhur. Prikl. Spektr. 55, 567 (1991).en_US
dc.identifier.citedreferenceA. I. Lukomskii, V. B. Shipilo, and L. M. Gameza, Zhur. Prikl. Spektr. 57, 100 (1992).en_US
dc.identifier.citedreferenceR. Vilanove, C. R. Acad. Sci. B 272, 1066 (1972).en_US
dc.identifier.citedreferenceD. M. Hoffman, G. L. Doll, and P. C. Eklund, Phys. Rev. B 30, 6051 (1984).en_US
dc.identifier.citedreferenceA. Zunger, A. Katzir, and A. Halperin, Phys. Rev. B 13, 5560 (1976).en_US
dc.identifier.citedreferenceV. A. Fomichev and M. A. Rumsh, J. Phys. Chem. Solids 29, 1015 (1968).en_US
dc.identifier.citedreferenceR. M. Chrenko, Solid State Commun. 14, 511 (1974).en_US
dc.identifier.citedreferenceN. Miyata, K. Moriki, O. Mishima, M. Fujisawa, and T. Hattori, Phys. Rev. B 40, 12028 (1989).en_US
dc.identifier.citedreferenceA. Onodera, M. Nakatani, M. Kobayashi, Y. Nisida, and O. Mishima, Phys. Rev. B 48, 2777 (1993).en_US
dc.identifier.citedreferenceP. J. Gielisse, S. S. Mitra, J. N. Plendl, R. D. Griffis, L. C. Mansur, R. Marshall, and E. A. Pascoe, Phys. Rev. 155, 1039 (1967).en_US
dc.identifier.citedreferenceD. J. Kester, K. S. Ailey, R. F. Davis, and K. L. More, J. Mater. Res. 8, 1213 (1993).en_US
dc.identifier.citedreferenceJ. Ruan, K. Kobashi, and W. J. Choyke, Appl. Phys. Lett. 60, 1884 (1992).en_US
dc.identifier.citedreferenceA. T. Collins, M. Kamo, and Y. Sato, J. Mater. Res. 5, 2507 (1990).en_US
dc.identifier.citedreferenceR. Geick, C. H. Perry, and G. Rupprecht, Phys. Rev. 146, 543 (1966).en_US
dc.identifier.citedreferenceH. Kawarada, T. Tsutsumi, H. Hirayama, and A. Yamaguchi, Appl. Phys. Lett. 64, 451 (1994).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
APPLAB-65-10-1251-1.pdf
Size:
391.1KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe its collections in a way that respects the people and communities who create, use, and are represented in them. We encourage you to Contact Us anonymously if you encounter harmful or problematic language in catalog records or finding aids. More information about our policies and practices is available at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.